| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The IPB14N03LA G is an N-Channel logic-level MOSFET from Infineon Technologies, part of the OptiMOS family. It features a drain-source voltage rating of 25V and a continuous drain current of 30A at Tc=25°C. The typical on-resistance is 11.3 mOhm at Vgs=10V, Id=30A, with a maximum of 13.6 mOhm.
Electrical characteristics include a gate threshold voltage range of 1.2V to 2V, input capacitance of 784 pF typical, and total gate charge of 6.3 nC typical at Vgs=5V. Switching times are fast with typical turn-on delay of 7.0 ns and fall time of 2.6 ns. The device is rated for single-pulse avalanche energy up to 60 mJ.
Thermally, the MOSFET can dissipate up to 46W at Tc=25°C and has a junction-to-case thermal resistance of 3.2 K/W. It operates over a temperature range of -55°C to 175°C. The package is a surface-mount TO-263-3 (D²Pak) with supplier device package PG-TO263-3-2.
The IPB14N03LA G is RoHS3 compliant and suitable for high-frequency dc/dc converters, power management, and load switching applications.
25 V.
30 A at Tc=25°C.
TO-263-3 (D²Pak).
-55°C to 175°C.
Yes, RoHS3 compliant.
11.3 mOhm typical, 13.6 mOhm maximum.
1.2V minimum, 1.6V typical, 2V maximum at Id=20µA.