| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
101,020 pcs
|
101020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPB144N12N3GATMA1 is an N-Channel enhancement mode power MOSFET from the OptiMOS 3 family, designed for high-efficiency power conversion. It offers a drain-to-source voltage (Vds) of 120V and a continuous drain current (Id) of 56A at 25°C case temperature. The device features a maximum on-state resistance (Rds(on)) of 14.4 mOhm at Vgs=10V and Id=56A, ensuring low conduction losses.
This MOSFET is optimized for high-frequency switching applications, with typical switching times of 27ns turn-on delay, 56ns rise time, 56ns turn-off delay, and 26ns fall time. The gate charge (Qg) is 49 nC at Vgs=10V, and the input capacitance (Ciss) is 3220 pF at Vds=60V, supporting efficient gate drive design. The device is rated for a maximum power dissipation of 107W at case temperature Tc=25°C.
The IPB144N12N3GATMA1 is housed in a surface-mount PG-TO263-3 (D2PAK) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C. The part is RoHS compliant and REACH unaffected, meeting current environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.30 | $3.30 |
| 10+ | $2.15 | $2.15 |
| 100+ | $1.49 | $1.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 120V.
The continuous drain current (Id) is 56A at Ta=25°C.
The maximum on-state resistance (Rds(on)) is 14.4 mOhm at Id=56A and Vgs=10V.
It is available in a surface-mount PG-TO263-3 (D2PAK) package.
The operating junction temperature range is -55°C to 175°C.
Yes, it is listed as RoHS3 compliant.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=61µA and Vds=Vgs.