IPB120P04P4L03ATMA2 P-Channel MOSFET from Infineon rated for 40V drain-source voltage and 120A continuous drain current. Low on-resistance typical 3.1 mΩ in SMD version.
Mfr Part #:

IPB120P04P4L03ATMA2

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET from Infineon rated for 40V drain-source voltage and 120A continuous drain current. Low on-resistance typical 3.1 mΩ in SMD version.
✓ Total Stock: 2,020 pcs
$ Price Range: $1.38 - $3.92

IPB120P04P4L03ATMA2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,020 pcs
2020 pcs On Request 1 On Request On Request On Request On Request On Request

IPB120P04P4L03ATMA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB120P04P4L03ATMA2 Description

Short technical summary and product information.

The IPB120P04P4L03ATMA2 is a P-Channel enhancement mode power MOSFET from Infineon's OptiMOS-P2 family. It is rated for a drain-source voltage of 40 V and a continuous drain current of 120 A (at TC=25°C, VGS=-10V). The device features a low on-resistance (RDS(on)) of 2.6 mΩ typical (3.1 mΩ max) for the SMD version at VGS=-10V and ID=-100A.

 

Key electrical characteristics include a gate threshold voltage (VGS(th)) of 1.2 V min, 1.7 V typical, and 2.2 V max. The total gate charge (Qg) is 180 nC typical (234 nC max) at VGS=-10V. Input capacitance (Ciss) is 11380 pF typical, output capacitance (Coss) 3410 pF, and reverse transfer capacitance (Crss) 135 pF. The device is avalanche rated with single-pulse avalanche energy (EAS) of 78 mJ at ID=-60A.

 

Thermal characteristics include a junction-to-case thermal resistance (RthJC) of 1.1 K/W max and an operating junction temperature range of -55°C to 175°C. The MOSFET is packaged in a PG-TO263-3-2 (TO-263-3, D²Pak) surface mount package. It is RoHS3 compliant (green package) and MSL1 rated for 260°C peak reflow.

IPB120P04P4L03ATMA2 Quick Information

Product Type: P-Channel Power MOSFET
Series: OptiMOS-P2
Canonical Name: Infineon IPB120P04P4L03ATMA2 P-Channel MOSFET 40V 120A TO-263-3
Subcategory: Power MOSFET

IPB120P04P4L03ATMA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL1: Unlimited at 260°C peak reflow
REACH Status: REACH Unaffected

IPB120P04P4L03ATMA2 Estimated Pricing

Qty Low High
1+ $3.92 $3.92
10+ $2.57 $2.57
100+ $1.80 $1.80
500+ $1.48 $1.48
1,000+ $1.38 $1.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB120P04P4L03ATMA2 Features

  • P-Channel enhancement mode MOSFET.
  • Rated for 40V drain-source voltage.
  • 120A continuous drain current capability.
  • Low on-resistance typical 2.6 mΩ SMD.
  • AEC qualified for automotive use.

IPB120P04P4L03ATMA2 Applications

  • Used in automotive power management systems.
  • Ideal for DC-DC converter circuits.
  • Suitable for battery protection applications.
  • Applicable in high-current load switches.

IPB120P04P4L03ATMA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40 V

What package type is available?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (PG-TO263-3-2)

What is the operating temperature range?

-55°C to 175°C (junction temperature)

Is the component RoHS compliant?

Yes, RoHS3 compliant with green package.

What is the continuous drain current at TC=25°C?

120 A at VGS=-10V

What is the typical on-resistance for the SMD version?

2.6 mOhm typical at VGS=-10V, ID=-100A (3.1 mOhm max)

What is the gate threshold voltage range?

Minimum 1.2V, typical 1.7V, maximum 2.2V at ID=-340µA

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