| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,817 pcs
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2817 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
410 pcs
|
410 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB120P04P4L03ATMA1 is a P-Channel enhancement mode Power MOSFET from Infineon's OptiMOS-P2 family. It is designed for logic-level gate drive with 4.5V and 10V drive voltages, enabling low on-resistance of 3.1 mOhm maximum at 10V. The device supports continuous drain current up to 120A at 25°C case temperature and pulsed current up to 480A.
Key electrical characteristics include a drain-source breakdown voltage of -40V, gate threshold voltage of -2.2V maximum, and typical input capacitance of 15000 pF. The MOSFET can dissipate up to 136W and operates over a junction temperature range of -55°C to 175°C. It features fast switching with typical turn-on delay of 21 ns and rise time of 16 ns.
The device is housed in a surface-mount D2PAK (TO-263-3) package with gull wing terminals. It is RoHS3 compliant, MSL1 rated for up to 260°C peak reflow, and 100% avalanche tested with 78 mJ single-pulse avalanche energy. This component is suitable for high-current switching applications in automotive and industrial environments.
The drain-source voltage rating is 40V (magnitude, with negative polarity for P-channel).
The device is offered in a TO-263-3 (D2Pak) surface mount package with gull wing terminals.
The junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant with a green package.
The continuous drain current is 120A at 25°C case temperature and 114A at 100°C.
The maximum on-resistance is 3.1 mOhm at Vgs=-10V, Id=-100A, and 4.9 mOhm at Vgs=-4.5V, Id=-100A.
The maximum gate threshold voltage is -2.2V at Id=-340µA with Vds=Vgs.