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IPB120P04P4L-03 The Infineon IPB120P04P4L-03 is a P-channel OptiMOS®-P2 Power MOSFET. It offers a -40V drain-source breakdown voltage and a maximum power dissipation of 136W.
Mfr Part #:

IPB120P04P4L-03

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB120P04P4L-03 is a P-channel OptiMOS®-P2 Power MOSFET. It offers a -40V drain-source breakdown voltage and a maximum power dissipation of 136W.
✓ Total Stock: 7,848 pcs
$ Price Range: $6.44

IPB120P04P4L-03 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,152 pcs
On Request
5152 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,696 pcs
On Request
1696 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request 21+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB120P04P4L-03 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Power Dissipation
Reverse Recovery Time
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IPB120P04P4L-03 Description

Short technical summary and product information.

The Infineon IPB120P04P4L-03 is a P-channel, logic-level, enhancement-mode OptiMOS®-P2 Power MOSFET. It is AEC qualified and designed for high-performance applications.

 

Key electrical characteristics include a drain-source breakdown voltage of -40V and a gate threshold voltage ranging from -1.2V to -2.2V. The device exhibits low on-state resistance, with a maximum of 3.1mW at VGS=-10V, ID=-100A (SMD version). It supports continuous drain currents up to -120A at 25°C case temperature.

 

Thermal performance is supported by a junction-to-case thermal resistance of 1.1 K/W, allowing for a power dissipation of 136W at 25°C case temperature. The operating and storage temperature range is -55°C to +175°C.

 

Available in PG-TO263-3-2, PG-TO262-3-1, and PG-TO220-3-1 packages, the IPB120P04P4L-03 is suitable for various power management applications.

IPB120P04P4L-03 Quick Information

Product Type: Power MOSFET
Series: OptiMOS®-P2
Canonical Name: IPB120P04P4L-03 P-channel Logic Level Enhancement Mode Power MOSFET
Subcategory: Power MOSFET

IPB120P04P4L-03 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB120P04P4L-03 Estimated Pricing

Qty Low High
1+ $6.44 $6.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB120P04P4L-03 Features

  • P-channel logic-level enhancement mode MOSFET.
  • AEC qualified for automotive applications.
  • Maximum power dissipation of 136W at 25°C.
  • Wide operating temperature range of -55°C to +175°C.
  • Available in TO-263, TO-262, and TO-220 packages.

IPB120P04P4L-03 Applications

  • Suitable for automotive power systems.
  • Ideal for high-efficiency power management.
  • Used in DC-DC conversion circuits.
  • Applicable for load switching tasks.

IPB120P04P4L-03 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

-40V

What is the typical gate threshold voltage?

-1.7V

What is the maximum continuous drain current?

-120A

What is the maximum power dissipation?

136W

What is the operating temperature range?

-55°C to +175°C

What package options are available?

PG-TO263-3-2, PG-TO262-3-1, and PG-TO220-3-1

Is this component RoHS compliant?

Yes, it is RoHS compliant.

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