| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,319 pcs
|
1319 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Conflict Minerals | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The Infineon IPB120P04P4-04 is a P-channel, normal level, enhancement mode MOSFET from the OptiMOS®-P2 series. It is AEC qualified and designed for high-performance applications.
Key electrical characteristics include a drain-source breakdown voltage of -40V and a gate threshold voltage typically around -3V. The drain-source on-state resistance is as low as 2.6mΩ at a gate-source voltage of -10V and a drain current of -100A for the SMD version. Continuous drain current is rated at -120A at 25°C case temperature and -110A at 100°C case temperature.
This device operates over a wide temperature range from -55°C to +175°C. It features a thermal resistance junction-to-case of 1.1 K/W. The IPB120P04P4-04 is available in a PG-TO263-3-2 package, suitable for surface mounting.
Additional features include 100% avalanche tested and a green package compliant with RoHS standards. The MSL rating is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40V (minimum at VGS=0V, ID=-1mA).
-120A at TC=25°C, VGS=-10V (current limited by bondwire).
2.9mΩ typical at VGS=-10V, ID=-100A for the leaded version and 2.6mΩ for the SMD version.
PG-TO263-3-2 surface-mount package.
-55°C to +175°C.
-3V typical (at VDS=VGS, ID=-340µA).
136W at TC=25°C.