| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,030 pcs
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4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPB120N10S4-05 is a high-performance N-channel Power MOSFET from the OptiMOS®-T2 family. It is designed for demanding automotive and power applications, offering robust performance and reliability.
Key electrical characteristics include a drain-source breakdown voltage of 100V and a continuous drain current of 120A at 25°C case temperature. The device features a low drain-source on-state resistance, with a typical value of 4.5mΩ at 100A and 10V gate-source voltage. It also boasts a gate threshold voltage typically around 2.7V.
This MOSFET operates within a wide temperature range from -55°C to +175°C. It is packaged in a PG-TO263-3-2 surface-mount package, suitable for various assembly processes. The device is AEC Q101 qualified, ensuring suitability for automotive environments.
Additional features include 100% avalanche tested and RoHS compliance, making it a reliable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 2.7V.
The continuous drain current at 25°C is 120A.
The typical drain-source on-state resistance at 100A is 4.5mΩ.
The operating and storage temperature range is -55°C to +175°C.
It is in a PG-TO263-3-2 package.
Yes, it is AEC Q101 qualified.