| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
125 pcs
|
125 pcs | On Request | 1 | On Request | On Request | 1642+ | On Request | On Request |
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| Manufacturer Name | |
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| Reverse Recovery Time |
The Infineon IPB120N08S4-03 is an N-channel enhancement mode power MOSFET from the OptiMOS™-T2 family. It features a drain-source breakdown voltage of 80V and a high continuous drain current capability of 120A at 25°C.
This device is AEC Q101 qualified and operates at temperatures up to 175°C. Key electrical characteristics include a low on-state resistance (RDS(on)) and significant power dissipation capability of 278W at 25°C.
The MOSFET is supplied in a PG-TO220-3 package suitable for through-hole mounting. It also boasts 100% avalanche tested and RoHS compliance, making it suitable for various automotive and industrial applications requiring robust power switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 80V at VGS=0V and ID=1mA.
The continuous drain current is 120A at both 25°C and 100°C case temperatures with VGS=10V.
The operating and storage temperature range is -55°C to +175°C.
The device is offered in a PG-TO220-3 package with through-hole mounting.
The gate threshold voltage ranges from 2.0V to 4.0V at VDS=VGS and ID=223µA.
The maximum power dissipation is 278W at a case temperature of 25°C.
The reverse recovery time is typically 80ns at VR=40V, IF=50A, and diF/dt=100A/µs.