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IPB120N06N G N-Channel power MOSFET in a D2PAK package, rated for 60V drain-source voltage and 75A continuous drain current. Features low 11.7mΩ on-resistance and 158W power dissipation.
Mfr Part #:

IPB120N06N G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET in a D2PAK package, rated for 60V drain-source voltage and 75A continuous drain current. Features low 11.7mΩ on-resistance and 158W power dissipation.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.63 - $0.73

IPB120N06N G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request 10+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB120N06N G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPB120N06N G Description

Short technical summary and product information.

The IPB120N06N G is an N-channel power MOSFET from Infineon Technologies in a D2PAK (TO-263-3) surface-mount package. It is designed for high-current switching applications, with a maximum drain-source voltage of 60V and a continuous drain current of 75A at 25°C case temperature.

 

In terms of electrical characteristics, the device has a maximum on-resistance of 11.7mΩ at Vgs=10V and Id=75A, a total gate charge of 62nC at Vgs=10V, and an input capacitance of 2100pF at Vds=30V. The maximum power dissipation is 158W at 25°C, and the operating junction temperature range is from -55°C to 175°C.

 

This MOSFET is listed as RoHS compliant and has a moisture sensitivity level of 1 (unlimited). It is supplied in the PG-TO263-3 package and is suitable for power-switching designs where low conduction losses and high current handling are required.

IPB120N06N G Quick Information

Product Type: MOSFET
Canonical Name: IPB120N06N G - N-Channel Power MOSFET
Subcategory: Single MOSFET

IPB120N06N G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IPB120N06N G Estimated Pricing

Qty Low High
1,000+ $0.73 $0.73
2,000+ $0.67 $0.67
3,000+ $0.65 $0.65
5,000+ $0.63 $0.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB120N06N G Features

  • N-channel MOSFET rated for 60V operation.
  • Supports 75A continuous drain current.
  • Low on-resistance of 11.7mΩ max.
  • Surface-mount D2PAK package for assembly.
  • RoHS compliant for environmental standards.

IPB120N06N G Applications

  • For high-current load switching circuits.
  • Power supply and DC-DC converter designs.
  • Motor drive and power management systems.
  • Battery protection in rechargeable devices.

IPB120N06N G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The maximum drain-source voltage is 60V.

What package is the IPB120N06N G available in?

It is available in a TO-263-3 (D2Pak) surface-mount package, also known as PG-TO263-3.

What is the operating temperature range?

The operating junction temperature range is -55°C to +175°C.

Is the IPB120N06N G RoHS compliant?

Yes, the device is RoHS3 compliant.

What is the continuous drain current rating?

The continuous drain current is 75A at 25°C case temperature.

What is the on-resistance of the device?

The maximum on-resistance is 11.7mΩ at Vgs=10V and Id=75A.

What is the gate charge of the device?

The maximum total gate charge is 62nC at Vgs=10V.

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