Mfr Part #:

IPB120N04S402ATMA1

Available from 1 distributors

Mfr Name: Infineon Technologies

N-Channel 40V 120A Power MOSFET in D2PAK package. Low on-resistance of 1.8mΩ enables high efficiency.

✓ Total Stock: 648 pcs

$ Price Range: $1.18 - $3.19

IPB120N04S402ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	648 pcs On Request	648 pcs	On Request	1	On Request	On Request	18+	On Request	On Request

IPB120N04S402ATMA1 Description

Short technical summary and product information.

The IPB120N04S402ATMA1 is an N-Channel enhancement mode power MOSFET from Infineon's OptiMOS-T2 family. It is designed for high efficiency power conversion with a drain-source voltage rating of 40V and continuous drain current of 120A at Tc=25°C. The device features a low typical on-resistance of 1.58 mΩ (max 1.8 mΩ) at Vgs=10V, reducing conduction losses.

This MOSFET offers excellent switching performance with a total gate charge of 103 nC typical and fast switching times (td(on)=27ns, tr=16ns, td(off)=30ns, tf=30ns). It is 100% avalanche tested with a single pulse avalanche energy rating of 480 mJ. The device is AEC qualified and operates over a junction temperature range of -55°C to 175°C.

Packaged in a surface mount PG-TO263-3 (D2Pak) with gull wing leads, the IPB120N04S402ATMA1 is RoHS compliant and rated MSL1 for unlimited floor life. It is suitable for automotive, DC-DC converter, motor control, and high current switching applications.

IPB120N04S402ATMA1 Quick Information

Product Type: N-Channel Power MOSFET

Series: OptiMOS-T2

Canonical Name: N-Channel 40V 120A Power MOSFET

Subcategory: N-Channel Power MOSFET

IPB120N04S402ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

IPB120N04S402ATMA1 Estimated Pricing

Qty	Low	High
1+	$3.19	$3.19
10+	$2.14	$2.14
100+	$1.54	$1.54
500+	$1.28	$1.28
1,000+	$1.18	$1.18

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB120N04S402ATMA1 Features

N-Channel MOSFET with 40V drain-source voltage.
Continuous drain current up to 120A.
Low on-resistance of 1.58 mΩ typical.
AEC qualified for automotive applications.
175°C maximum junction temperature.

IPB120N04S402ATMA1 Applications

Used in DC-DC converters and power supplies.
Suitable for motor control and automotive.
Ideal for high current switching circuits.
Optimized for low voltage high efficiency designs.

IPB120N04S402ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

40V

What package is this MOSFET available in?

PG-TO263-3 (D2Pak)

What is the operating temperature range?

-55°C to 175°C

Is this device RoHS compliant?

Yes, it is RoHS compliant (Green Product).

What is the typical on-resistance?

1.58 mΩ at Vgs=10V, Id=100A (SMD version).

What is the total gate charge?

103 nC typical, 134 nC maximum.

What is the avalanche energy rating?

480 mJ single pulse at Id=60A.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC / 134 nC
Input Capacitance (Ciss) (Max) @ Vds	8260 pF / 10740 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	158 W
Rds On (Max) @ Id, Vgs	1.58 mΩ / 1.8 mΩ
Reverse Recovery Time (trr)	60 ns
SVHC Present	Not Present
Storage Temperature	-55.0°C ~ 175.0°C
Supplier Device Package	PG-TO263-3
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Termination Style	Gull Wing
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.0 V / 3.0 V / 4.0 V