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IPB120N04S4-02 The Infineon IPB120N04S4-02 is an N-channel Power MOSFET with a 40V drain-source breakdown voltage and a continuous drain current of 120A. It offers a low on-state resistance of 1.8mΩ.
Mfr Part #:

IPB120N04S4-02

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB120N04S4-02 is an N-channel Power MOSFET with a 40V drain-source breakdown voltage and a continuous drain current of 120A. It offers a low on-state resistance of 1.8mΩ.
✓ Total Stock: 13,553 pcs
$ Price Range: $1.67

IPB120N04S4-02 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,888 pcs
On Request
7888 pcs On Request 1 On Request On Request 21+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,539 pcs
On Request
3539 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,126 pcs
On Request
2126 pcs On Request 1 On Request On Request 1433+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB120N04S4-02 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time
Storage Temperature
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IPB120N04S4-02 Description

Short technical summary and product information.

The Infineon IPB120N04S4-02 is an N-channel OptiMOS®-T2 Power MOSFET designed for high-performance applications. It features a drain-source breakdown voltage of 40V and a continuous drain current capability of 120A at 25°C case temperature.

 

Key electrical characteristics include a typical gate threshold voltage of 3V and a low drain-source on-state resistance, as low as 1.8mΩ at VGS=10V and ID=100A for the SMD version. The device operates within a temperature range of -55°C to +175°C.

 

This MOSFET is AEC qualified and suitable for automotive applications. It is available in a PG-TO263-3-2 package, designed for surface mounting.

 

Additional features include a 100% avalanche tested rating and compliance with RoHS standards.

IPB120N04S4-02 Quick Information

Product Type: N-channel Power MOSFET
Series: IPB120N04S4-02
Canonical Name: Infineon IPB120N04S4-02 N-channel OptiMOS®-T2 Power-Transistor
Subcategory: N-Channel

IPB120N04S4-02 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB120N04S4-02 Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB120N04S4-02 Features

  • N-channel enhancement mode MOSFET.
  • 40V drain-source breakdown voltage.
  • 120A continuous drain current.
  • Low 1.8mΩ on-state resistance.
  • AEC qualified for automotive use.

IPB120N04S4-02 Applications

  • Suitable for automotive motor control applications.
  • Ideal for high-current power switching circuits.
  • Used in in-vehicle power management systems.
  • Applicable in high-temperature industrial switching.
  • Suitable for load switching in renewable energy systems.

IPB120N04S4-02 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the IPB120N04S4-02?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 3V.

What is the maximum continuous drain current?

The maximum continuous drain current is 120A.

What is the typical drain-source on-state resistance?

The typical drain-source on-state resistance is 1.88mΩ at VGS=10V, ID=100A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package type is the IPB120N04S4-02 available in?

The IPB120N04S4-02 is available in the PG-TO263-3-2 package.

Is this MOSFET AEC qualified?

Yes, this MOSFET is AEC qualified.

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