| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPB120N04S4-01 is an N-channel enhancement mode OptiMOS®-T2 Power MOSFET. It is AEC qualified and rated for a maximum operating temperature of 175°C.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a continuous drain current of 120A at 25°C case temperature. The on-state resistance is as low as 1.5 mΩ at VGS=10V and ID=100A for the SMD version. Dynamic characteristics include input capacitance up to 14000 pF and output capacitance up to 3150 pF.
This MOSFET is available in a PG-TO263-3-2 package, suitable for surface mounting. It features a thermal resistance junction-to-case of 0.8 K/W, enabling efficient heat dissipation.
The device is RoHS compliant and designed for demanding applications requiring high current and low on-resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 3V.
The maximum continuous drain current is 120A.
The maximum operating temperature is 175°C.
The package type is PG-TO263-3-2.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.