IPB110N20N3LFATMA1 N-Channel MOSFET, 200V drain-source voltage, 88A continuous drain current, 11mOhm on-resistance, in TO-263-3 surface mount package.
Mfr Part #:

IPB110N20N3LFATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 200V drain-source voltage, 88A continuous drain current, 11mOhm on-resistance, in TO-263-3 surface mount package.
✓ Total Stock: 4,020 pcs
$ Price Range: $3.57 - $8.43

IPB110N20N3LFATMA1 Available from 1 distributor

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✓ Non-Authorised
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4,020 pcs
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IPB110N20N3LFATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB110N20N3LFATMA1 Description

Short technical summary and product information.

The IPB110N20N3LFATMA1 is an N-Channel MOSFET from Infineon Technologies, part of the OptiMOS 3 Linear FET family. It features a maximum drain-source voltage of 200V and a continuous drain current of 88A at 25°C case temperature (61A at 100°C). The device has a very low on-resistance of 11mOhm maximum at 88A and 10V gate drive, and a total gate charge of 76nC at 10V. Input capacitance is 650pF at 100V drain-source voltage. It is avalanche tested with a single pulse avalanche energy rating of 560mJ. Power dissipation is 250W at 25°C case temperature, and the junction temperature range is -55°C to 150°C.

 

This MOSFET is designed for linear operation in hot-swap and e-fuse applications, offering a wide safe operating area. It is 100% avalanche tested and qualified per JEDEC standards. The device is halogen-free per IEC61249-2-21 and has Pb-free plating, with RoHS compliance stated in the datasheet.

 

The IPB110N20N3LFATMA1 is supplied in a surface-mount TO-263-3 (D²Pak) package, also known as PG-TO263-3. It is suitable for high-current switching and power management circuits.

IPB110N20N3LFATMA1 Quick Information

Product Type: MOSFET - Single
Series: OptiMOS 3 Linear FET
Canonical Name: Infineon Technologies IPB110N20N3LFATMA1 N-Channel OptiMOS 3 Linear FET MOSFET, 200V, 88A, TO-263-3
Subcategory: Single MOSFET

IPB110N20N3LFATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPB110N20N3LFATMA1 Estimated Pricing

Qty Low High
1+ $8.43 $8.43
10+ $5.64 $5.64
100+ $4.35 $4.35
500+ $4.10 $4.10
1,000+ $3.57 $3.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB110N20N3LFATMA1 Features

  • N-Channel OptiMOS 3 Linear FET MOSFET.
  • 200V drain-source voltage rating.
  • 88A continuous drain current at 25°C.
  • 11mOhm maximum on-resistance at 10V.
  • 100% avalanche tested.

IPB110N20N3LFATMA1 Applications

  • Ideal for hot-swap and e-fuse applications.
  • Used in power management circuits.
  • Suitable for high current switching.
  • Designed for linear operation in safe operating area.

IPB110N20N3LFATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type for IPB110N20N3LFATMA1?

TO-263-3, D²Pak (2 leads + tab), TO-263AB surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IPB110N20N3LFATMA1 RoHS compliant?

Yes, RoHS3 compliant, halogen-free per IEC61249-2-21, and Pb-free plating.

What is the drain-source voltage rating?

200V maximum.

What is the maximum continuous drain current?

88A at 25°C case temperature, 61A at 100°C.

What is the on-resistance?

11mOhm maximum at 88A, 10V gate drive.

What is the total gate charge?

76nC maximum at 10V gate voltage.

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