RN1416,LFT
Toshiba
The Toshiba RN1416,LFT is an RF Diode. It features RoHS3 Compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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118 pcs
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118 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies IPB100N06S3L-03 is an OptiMOS™-T power transistor designed for high-performance applications. This n-channel enhancement mode MOSFET offers a drain-source breakdown voltage of 55V and a continuous drain current of 100A at 25°C.
Key electrical characteristics include a low on-state resistance, with a maximum of 2.7 mΩ at VGS=10V and ID=80A for the SMD version. The gate threshold voltage ranges from 1.2V to 2.2V. Dynamic characteristics include an input capacitance of 23800 pF and a turn-on delay time of 39 ns.
This device is AEC Q101 qualified and features a green package, making it suitable for lead-free manufacturing processes. It operates at temperatures ranging from -55°C to +175°C. The TO-263-3 package is designed for surface mounting.
With its high current capability and low on-resistance, the IPB100N06S3L-03 is well-suited for power switching applications where efficiency and thermal performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The typical gate threshold voltage is 1.7V.
The maximum continuous drain current is 100A.
The maximum on-state resistance is 2.7 mΩ.
The operating and storage temperature range is -55°C to +175°C.
The package type is TO-263-3.
Yes, this part is RoHS3 Compliant.