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IPB100N04S4-H2

The Infineon Technologies IPB100N04S4-H2 is an N-channel enhancement mode OptiMOS®-T2 Power-Transistor. It offers a 40V drain-source breakdown voltage and a continuous drain current of 100A.

✓ Total Stock: 6,034 pcs

$ Price Range: $1.67

IPB100N04S4-H2 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	2,692 pcs On Request	2692 pcs	On Request	1	On Request	On Request	1609+	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	1,872 pcs On Request	1872 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,470 pcs On Request	1470 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB100N04S4-H2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon Technologies
Mounting Type	Surface Mount
Power Dissipation	115W
Reverse Recovery Time	48ns
Type	IPB100N04S4-H2

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IPB100N04S4-H2 Description

Short technical summary and product information.

The Infineon Technologies IPB100N04S4-H2 is an N-channel enhancement mode OptiMOS®-T2 Power-Transistor designed for demanding applications. It features a drain-source breakdown voltage of 40V and a continuous drain current capability of 100A at 25°C case temperature.

Key electrical characteristics include a gate threshold voltage ranging from 2V to 4V, and a low drain-source on-state resistance of 2.4mΩ typical at 10V gate-source voltage and 100A drain current. The device also exhibits a pulsed drain current of up to 400A and avalanche energy of 280mJ.

With a junction-to-case thermal resistance of 1.3 K/W, the IPB100N04S4-H2 can dissipate significant power. It operates across a wide temperature range from -55°C to +175°C. The transistor is AEC qualified and rated for 175°C operating temperature.

Packaged in a PG-TO263-3-2 surface-mount package, this MOSFET is suitable for various power management and motor control applications, particularly in automotive environments.

IPB100N04S4-H2 Quick Information

Product Type: MOSFET

Canonical Name: OptiMOS®-T2 Power-Transistor

Subcategory: N-channel Power MOSFET

IPB100N04S4-H2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPB100N04S4-H2 Estimated Pricing

Qty	Low	High
1+	$1.67	$1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB100N04S4-H2 Features

N-channel enhancement mode MOSFET
40V drain-source breakdown voltage
100A continuous drain current
Low Rds(on) of 2.4mΩ typical
AEC qualified for automotive use

IPB100N04S4-H2 Applications

Automotive motor control applications
Power management solutions
High-current switching circuits
Efficient power conversion designs

IPB100N04S4-H2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 3V.

What is the maximum continuous drain current?

The maximum continuous drain current is 100A.

What is the typical drain-source on-state resistance?

The typical drain-source on-state resistance is 2.4mΩ.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package is this MOSFET in?

This MOSFET is in the PG-TO263-3-2 package.

Is this MOSFET AEC qualified?

Yes, this MOSFET is AEC qualified.