IPB097N08N3G N-Channel power MOSFET from Infineon with 80V drain-source voltage and 70A continuous drain current. Low on-resistance of 9.7 mOhm for high efficiency.
Mfr Part #:

IPB097N08N3G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET from Infineon with 80V drain-source voltage and 70A continuous drain current. Low on-resistance of 9.7 mOhm for high efficiency.
✓ Total Stock: 2,624 pcs
$ Price Range: $0.19 - $0.51

IPB097N08N3G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,624 pcs
2624 pcs On Request 1 On Request On Request 11+ On Request On Request

IPB097N08N3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB097N08N3G Description

Short technical summary and product information.

The Infineon IPB097N08N3G is an N-Channel enhancement mode power MOSFET built with advanced MOSFET technology. It is designed for high-efficiency power conversion applications. The device features a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 70A. The maximum on-resistance is 9.7 mOhm at a gate-source voltage of 10V and a drain current of 46A. This low on-resistance minimizes conduction losses. The gate charge (Qg) is typically 35 nC, enabling fast switching transitions. The input capacitance (Ciss) is 2410 pF at Vds=40V. The threshold voltage (Vgs(th)) is a maximum of 3.5V at 46µA drain current. The device supports a drive voltage range of 6V to 10V for optimal performance. It is capable of dissipating up to 100W of power. The operating junction temperature range is -55°C to 175°C. The MOSFET is housed in a surface mount TO-263-3 (D²Pak) package with the supplier device package PG-TO263-3, suitable for automated assembly. The part is RoHS3 compliant and has an MSL level of 1 (unlimited floor life). Typical applications include DC-DC converters, motor drives, power supplies, and automotive systems.

IPB097N08N3G Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: Infineon Technologies IPB097N08N3G N-Channel Power MOSFET
Subcategory: N-Channel

IPB097N08N3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB097N08N3G Estimated Pricing

Qty Low High
1+ $0.51 $0.51
200+ $0.20 $0.20
500+ $0.19 $0.19
1,000+ $0.19 $0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB097N08N3G Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • Continuous drain current rating of 70A.
  • Low on-resistance of 9.7 milliohm typical.
  • Gate charge of 35 nC for efficient switching.
  • Surface mount package in TO-263 (D²Pak).

IPB097N08N3G Applications

  • Suitable for high-efficiency DC-DC converters.
  • Used in motor control and power management.
  • Ideal for automotive and industrial power systems.
  • Can be applied in synchronous rectification circuits.

IPB097N08N3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IPB097N08N3G?

80 V.

What is the maximum continuous drain current?

70 A at case temperature (Tc).

What is the typical on-resistance?

9.7 mOhm maximum at Id=46A, Vgs=10V.

What is the gate charge specification?

35 nC maximum at Vgs=10V.

What is the operating temperature range?

-55°C to 175°C (junction).

What package does the IPB097N08N3G come in?

Surface mount TO-263-3 (D²Pak) with PG-TO263-3 supplier package.

Is the IPB097N08N3G RoHS compliant?

RoHS3 Compliant (unverified).

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