| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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490 pcs
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490 pcs | On Request | 1 | On Request | On Request | 0827+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPB096N03LG is an N-Channel Power MOSFET built with metal-oxide semiconductor technology. It is designed for efficient power switching and offers a maximum drain-source voltage of 30V and a continuous drain current of 35A. The device achieves a low on-resistance of 9.6mOhm maximum at 30A gate drive.
With 15nC total gate charge and 1600pF input capacitance, the MOSFET supports moderate-frequency switching applications. The gate threshold voltage is 2.2V maximum, and it can be driven with 4.5V or 10V logic levels. The maximum power dissipation is 42W at case temperature.
The IPB096N03LG is housed in a TO-263-3 (D2Pak) surface-mount package, also known as PG-TO263-3, with two leads and a tab for heat dissipation. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments. Compliance data shows RoHS3 compliant, MSL 1, and REACH unaffected (unverified).
The maximum drain-source voltage (Vdss) is 30V.
The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, also known as PG-TO263-3.
The operating junction temperature range is -55°C to 175°C.
According to available data, it is listed as RoHS3 Compliant, but this status is unverified with low confidence.
The maximum continuous drain current is 35A at case temperature (Tc).
The maximum on-resistance is 9.6mOhm at 30A drain current and 10V gate drive.
The maximum total gate charge (Qg) is 15nC at Vgs = 10V.