| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
356,020 pcs
|
356020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB090N06N3GATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, manufactured using advanced MOSFET technology. It features a drain-source voltage rating of 60V and a continuous drain current of 50A at case temperature, making it suitable for a variety of power switching applications.
Key electrical characteristics include a maximum on-resistance of 9 milliohms at 50A drain current and 10V gate drive, and a maximum gate threshold voltage of 4V at 34µA drain current. The device can dissipate up to 71W of power at case temperature.
The MOSFET is offered in the industry-standard D2PAK (TO-263) surface-mount package, which facilitates efficient heat transfer and compact PCB layout. The package is rated for surface mount assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.36 | $2.36 |
| 10+ | $1.51 | $1.51 |
| 50+ | $1.15 | $1.15 |
| 100+ | $1.03 | $1.03 |
| 500+ | $0.82 | $0.82 |
| 1,000+ | $0.75 | $0.75 |
| 3,000+ | $0.67 | $0.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is rated at 60V.
The continuous drain current (Id) is 50A at case temperature (Tc).
The maximum on-resistance is 9 milliohms at a drain current of 50A and gate-source voltage of 10V.
It is available in the D2PAK (TO-263) surface mount package.
The part is indicated as RoHS3 Compliant, but this status is unverified. Verify against the latest datasheet or manufacturer statement.
The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 34µA.
The maximum power dissipation is 71W at case temperature (Tc).