IPB083N10N3GATMA1 N-Channel OptiMOS 3 Power MOSFET from Infineon. Features 100V drain-source voltage, 80A continuous drain current, and low 8.3mOhm on-resistance.
Mfr Part #:

IPB083N10N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel OptiMOS 3 Power MOSFET from Infineon. Features 100V drain-source voltage, 80A continuous drain current, and low 8.3mOhm on-resistance.
✓ Total Stock: 9,020 pcs
$ Price Range: $0.99 - $1.67

IPB083N10N3GATMA1 Available from 1 distributor

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IPB083N10N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Fall Time (Typ)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Rise Time (Typ)
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB083N10N3GATMA1 Description

Short technical summary and product information.

The IPB083N10N3GATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 series, designed for high efficiency and fast switching. With a drain-source breakdown voltage of 100V and continuous drain current of 80A at 25°C (58A at 100°C), it delivers robust performance in power conversion applications.

 

The device features a typical on-resistance of 7.2mOhm (max 8.3mOhm) at Vgs=10V, enabling low conduction losses. Gate charge is 55nC maximum, supporting high-frequency switching. It also offers avalanche energy capability of 110mJ single pulse. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 125W at case temperature 25°C.

 

Packaged in a PG-TO263-3 (D2PAK) surface mount package, the MOSFET is suitable for automated assembly. It is RoHS3 compliant, halogen-free according to IEC61249-2-21, and features Pb-free lead plating. Typical applications include high-frequency switching power supplies, synchronous rectification, DC-DC converters, and motor control.

IPB083N10N3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon IPB083N10N3GATMA1 N-Channel OptiMOS 3 Power MOSFET
Subcategory: Single MOSFET

IPB083N10N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPB083N10N3GATMA1 Estimated Pricing

Qty Low High
1+ $1.67 $1.67
10+ $1.50 $1.50
100+ $1.20 $1.20
500+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB083N10N3GATMA1 Features

  • N-channel MOSFET with 100V drain-source.
  • Continuous drain current up to 80A.
  • Typical on-resistance of 7.2 milliohms.
  • OptiMOS 3 technology for high efficiency.
  • Halogen-free and RoHS compliant package.

IPB083N10N3GATMA1 Applications

  • High-frequency switching power converters.
  • Synchronous rectification in power supplies.
  • DC-DC converters for telecom and industrial.
  • Motor control and automotive systems.

IPB083N10N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPB083N10N3GATMA1?

The drain-source breakdown voltage is 100V.

What package is the IPB083N10N3GATMA1 available in?

It is available in the PG-TO263-3 (D2PAK) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPB083N10N3GATMA1 RoHS compliant?

Yes, it is RoHS3 compliant and also halogen-free per IEC61249-2-21.

What is the continuous drain current at 25°C?

The continuous drain current is 80A at case temperature 25°C.

What is the typical on-resistance?

The typical on-resistance is 7.2mOhm at Vgs=10V, Id=73A.

What is the maximum gate charge?

The maximum gate charge is 55nC at Vgs=10V.

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