| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vgs(th) (Max) @ Id |
The IPB083N10N3GATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 series, designed for high efficiency and fast switching. With a drain-source breakdown voltage of 100V and continuous drain current of 80A at 25°C (58A at 100°C), it delivers robust performance in power conversion applications.
The device features a typical on-resistance of 7.2mOhm (max 8.3mOhm) at Vgs=10V, enabling low conduction losses. Gate charge is 55nC maximum, supporting high-frequency switching. It also offers avalanche energy capability of 110mJ single pulse. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 125W at case temperature 25°C.
Packaged in a PG-TO263-3 (D2PAK) surface mount package, the MOSFET is suitable for automated assembly. It is RoHS3 compliant, halogen-free according to IEC61249-2-21, and features Pb-free lead plating. Typical applications include high-frequency switching power supplies, synchronous rectification, DC-DC converters, and motor control.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
| 10+ | $1.50 | $1.50 |
| 100+ | $1.20 | $1.20 |
| 500+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
It is available in the PG-TO263-3 (D2PAK) surface mount package.
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and also halogen-free per IEC61249-2-21.
The continuous drain current is 80A at case temperature 25°C.
The typical on-resistance is 7.2mOhm at Vgs=10V, Id=73A.
The maximum gate charge is 55nC at Vgs=10V.