| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,065 pcs
|
10065 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Tape & Reel |
The IPB081N06L3G is a power transistor manufactured by VBsemi, categorized as an N-Channel MOSFET. This component is designed for various power switching and amplification applications.
Key electrical specifications include a maximum drain-source voltage of 60V and a drain-source on-resistance of 8.1mΩ at a gate-source voltage of 10V. The threshold voltage is rated at 1.7V. It offers a maximum power dissipation of 79W, supporting robust performance.
Operating temperature ranges from -55°C to 175°C, making it suitable for demanding environments. The component has an input capacitance of 3.7nF, a rise time of 26ns, and a fall time of 7ns, indicating efficient switching characteristics.
Packaged in a TO-263 surface mount package, the IPB081N06L3G is designed for easy integration into printed circuit boards. Its construction and specifications make it a versatile choice for power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The typical drain-source on-resistance is 8.1mΩ at 10V.
The operating temperature range is from -55°C to 175°C.
It is supplied in a TO-263 package.
It is a surface mount device.