| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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938 pcs
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938 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
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The Infineon IPB06N03LA is an N-channel logic level OptiMOS2 power MOSFET designed for high-frequency DC/DC converters. It features a maximum drain-source voltage of 25V and a continuous drain current of 50A at 25°C case temperature.
The device offers very low on-resistance (Rds(on)) of 5.9 mOhm max at 10V gate drive and 9.5 mOhm max at 4.5V gate drive, ensuring high efficiency. It integrates superior thermal performance with a junction-to-case thermal resistance of 1.8 K/W and operates across a -55°C to 175°C temperature range.
It is housed in a PG-TO263-3-2 surface-mount package (also known as D2Pak) and is qualified according to JEDEC standards. With excellent gate charge x Rds(on) figure of merit (FOM) and dv/dt rated reverse diode, it is ideal for demanding power conversion applications.
The maximum drain-source voltage (Vdss) is 25V.
The continuous drain current is 50A at Tc=25°C.
The typical on-resistance (Rds(on)) is 4.9 mOhm at Vgs=10V, Id=30A, with a maximum of 5.9 mOhm.
It comes in a PG-TO263-3-2 surface-mount package (TO-263-3, D²Pak).