| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
753 pcs
|
753 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB06CN10N G is an N-Channel enhancement mode power MOSFET from Infineon Technologies, designed for high efficiency switching applications. It offers a drain-source voltage rating of 100V and a continuous drain current of 100A at case temperature, with a maximum power dissipation of 214W.
Key electrical characteristics include a low on-resistance of 6.2mOhm maximum at 100A and 10V gate drive, a gate charge of 139nC at 10V, and an input capacitance of 9200pF at 50V. The threshold voltage is 4V maximum at 180µA drain current.
The device is housed in a surface mount TO-263-3 (D2Pak) package with supplier device package PG-TO263-3. It operates over a junction temperature range of -55°C to 175°C. The MOSFET is suitable for high frequency switching and synchronous rectification circuits as indicated in the datasheet.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.66 | $1.66 |
| 2,000+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
100A at case temperature.
6.2mOhm maximum at 100A and 10V gate drive.
139nC maximum at 10V.
-55°C to 175°C (junction).
TO-263-3 (D2Pak) surface mount package.
RoHS3 compliant (unverified).