IPB065N06LG N-Channel power MOSFET from Infineon, rated for 60V drain-source voltage and 80A continuous drain current. Features low on-resistance of 6.2mOhm and surface-mount D2PAK package.
Mfr Part #:

IPB065N06LG

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET from Infineon, rated for 60V drain-source voltage and 80A continuous drain current. Features low on-resistance of 6.2mOhm and surface-mount D2PAK package.
✓ Total Stock: 2,000 pcs
$ Price Range: $0.96 - $1.05

IPB065N06LG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

IPB065N06LG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB065N06LG Description

Short technical summary and product information.

The IPB065N06LG is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications, offering a drain-source voltage rating of 60V and a continuous drain current of 80A at case temperature (Tc). The device features a maximum on-resistance of 6.2mOhm at Vgs=10V and Id=80A, enabling low conduction losses.

 

This MOSFET utilizes advanced MOSFET (Metal Oxide) technology and supports gate drive voltages of 4.5V and 10V. The gate threshold voltage is typically 2V at Id=180µA, and the maximum gate-source voltage is ±20V. Input capacitance is 5100pF at Vds=30V, and total gate charge is 157nC at Vgs=10V, making it suitable for moderate-frequency switching.

 

The device is housed in a surface-mount TO-263-3 (D2PAK) package with supplier device package PG-TO263-3-2. It can dissipate up to 250W at case temperature and operates over a junction temperature range of -55°C to 175°C. The part is RoHS3 compliant and has an MSL rating of 1 (unlimited).

IPB065N06LG Quick Information

Product Type: Power MOSFET
Series: OptiMOS
Canonical Name: Infineon IPB065N06LG N-Channel Power MOSFET
Subcategory: Single N-Channel MOSFET

IPB065N06LG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

IPB065N06LG Estimated Pricing

Qty Low High
1,000+ $1.05 $1.05
2,000+ $0.98 $0.98
3,000+ $0.96 $0.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB065N06LG Features

  • Rated for 60V drain-source voltage.
  • Continuous drain current up to 80A.
  • Low on-resistance of 6.2mOhm maximum.
  • Surface-mount D2PAK package.
  • Wide operating temperature range -55°C to 175°C.

IPB065N06LG Applications

  • Used in power supply switching circuits.
  • Ideal for motor drive applications.
  • Suitable for DC-DC converter designs.
  • Applied in automotive power management.

IPB065N06LG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What package does the IPB065N06LG come in?

Surface-mount TO-263-3 (D2PAK) with supplier package PG-TO263-3-2.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the IPB065N06LG RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the maximum drain current?

80A at case temperature.

What is the on-resistance?

6.2mOhm maximum at Vgs=10V, Id=80A.

What is the gate charge?

157nC at Vgs=10V.

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