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IPB05N03LA N-Channel MOSFET with 25V drain-source breakdown voltage and 80A continuous drain current. Logic level gate drive, surface mount in TO-263 package.
Mfr Part #:

IPB05N03LA

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 25V drain-source breakdown voltage and 80A continuous drain current. Logic level gate drive, surface mount in TO-263 package.
✓ Total Stock: 608 pcs
$ Price Range: $0.87

IPB05N03LA Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
608 pcs
On Request
608 pcs On Request 1 On Request On Request 03+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB05N03LA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPB05N03LA Description

Short technical summary and product information.

The IPB05N03LA is an N-channel logic level MOSFET from Infineon's OptiMOS 2 family. It features a drain-source voltage of 25V and continuous drain current of 80A at 25°C case temperature. The device offers low on-resistance of 4.6 mΩ maximum at 10V gate drive, and 7.8 mΩ maximum at 4.5V gate drive, making it suitable for high-frequency DC/DC converters. It has a maximum power dissipation of 94W and operates over a junction temperature range of -55°C to 175°C. The MOSFET is qualified according to JEDEC standards and is RoHS compliant with lead-free plating. It is supplied in a PG-TO263-3-2 surface mount package (D²Pak). The device also features a logic level gate threshold voltage of 1.2V to 2V, enabling direct drive from low-voltage logic. With low gate charge (25 nC max at 5V) and excellent figure of merit (gate charge x RDS(on)), it is optimized for high-efficiency power conversion.

IPB05N03LA Quick Information

Product Type: MOSFET
Series: OptiMOS2
Canonical Name: IPB05N03LA N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPB05N03LA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

IPB05N03LA Estimated Pricing

Qty Low High
346+ $0.87 $0.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB05N03LA Features

  • N-channel logic level MOSFET.
  • 25V drain-source breakdown voltage.
  • 80A continuous drain current at 25°C.
  • Low on-resistance of 4.6 mΩ maximum.
  • Surface mount TO-263 package.

IPB05N03LA Applications

  • Ideal for high-frequency DC/DC converters.
  • Used in power management circuits.
  • Suitable for load switching applications.
  • Designed for automotive and industrial systems.

IPB05N03LA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

25V.

What is the continuous drain current?

80A at Tc=25°C.

What is the on-resistance?

4.6 mΩ maximum at Vgs=10V, Id=55A.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the device RoHS compliant?

Yes, RoHS compliant and lead-free.

What package is it available in?

PG-TO263-3-2 (D²Pak) surface mount.

What is the gate threshold voltage?

1.2V min, 1.6V typ, 2V max.

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