DistyParts Icon
IPB057N06N The Infineon IPB057N06N is an N-channel MOSFET designed for synchronous rectification. It offers a 60V drain-source breakdown voltage and a continuous drain current of 45A.
Mfr Part #:

IPB057N06N

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB057N06N is an N-channel MOSFET designed for synchronous rectification. It offers a 60V drain-source breakdown voltage and a continuous drain current of 45A.
✓ Total Stock: 17,917 pcs
$ Price Range: $2.40

IPB057N06N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
16,497 pcs
On Request
16497 pcs On Request 1 On Request On Request 1544+1548+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,420 pcs
On Request
1420 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB057N06N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Input Capacitance
Lead Style
Mounting Type
View Similar Products (0)

IPB057N06N Description

Short technical summary and product information.

The Infineon IPB057N06N is an N-channel OptiMOSTM Power-Transistor optimized for synchronous rectification applications. It features a drain-source breakdown voltage of 60V and a continuous drain current of 45A at 25°C case temperature.

 

This MOSFET boasts superior thermal resistance and is 100% avalanche tested. Key electrical characteristics include a low on-state resistance (RDS(on)) of 5.7 mΩ maximum at 45A and 10V gate-source voltage, and a gate threshold voltage typically around 2.8V.

 

Packaged in a PG-TO263-3 surface-mount package, the IPB057N06N is suitable for various power management designs. It operates within a temperature range of -55°C to 175°C and is Pb-free and Halogen-free compliant.

IPB057N06N Quick Information

Product Type: N-channel MOSFET
Series: OptiMOS
Canonical Name: Infineon IPB057N06N N-channel Power MOSFET
Subcategory: N-Channel

IPB057N06N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IPB057N06N Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB057N06N Features

  • Optimized for synchronous rectification.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, normal level.
  • Pb-free and Halogen-free compliant.

IPB057N06N Applications

  • Synchronous rectification circuits.
  • Power supply applications.
  • DC-DC converters.
  • Switching power supplies.

IPB057N06N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the IPB057N06N?

The drain-source breakdown voltage is 60V.

What is the typical gate threshold voltage for the IPB057N06N?

The typical gate threshold voltage is 2.8V.

What is the maximum continuous drain current for the IPB057N06N?

The maximum continuous drain current is 45A.

What is the maximum drain-source on-state resistance at 10V gate-source voltage and 45A drain current?

The maximum drain-source on-state resistance is 5.7mW.

What is the package type for the IPB057N06N?

The package type is PG-TO263-3.

Is the IPB057N06N RoHS compliant?

Yes, the IPB057N06N is RoHS3 Compliant.

Is the IPB057N06N Halogen-free?

Yes, the IPB057N06N is Halogen-free.

Home
Account

Categories