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IPB051NE8NG N-Channel Power MOSFET with 85V drain-source voltage and 100A continuous drain current. Low on-resistance of 5.1mOhm at 10V gate drive.
Mfr Part #:

IPB051NE8NG

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET with 85V drain-source voltage and 100A continuous drain current. Low on-resistance of 5.1mOhm at 10V gate drive.
✓ Total Stock: 1,000 pcs
$ Price Range: $3.23

IPB051NE8NG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request 11+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB051NE8NG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPB051NE8NG Description

Short technical summary and product information.

The Infineon Technologies IPB051NE8NG is an N-Channel enhancement mode power MOSFET built on advanced MOSFET technology. It is designed for high-efficiency power conversion and switching applications.

 

Key electrical characteristics include a maximum drain-source voltage of 85V and a continuous drain current rating of 100A at case temperature. The device features a very low typical on-resistance of 5.1mOhm maximum at Vgs=10V and Id=100A, enabling high current handling with minimal conduction losses. Gate threshold voltage is 4V maximum at 250µA drain current, and the gate-source voltage rating is ±20V.

 

The MOSFET is housed in a surface-mount TO-263-3 (D2PAK) package with supplier device package PG-TO263-3-2. Maximum power dissipation is 300W at case temperature, and the operating junction temperature range is -55°C to 175°C.

IPB051NE8NG Quick Information

Product Type: Power MOSFET
Canonical Name: Infineon Technologies IPB051NE8NG N-Channel Power MOSFET
Subcategory: Power MOSFET

IPB051NE8NG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB051NE8NG Estimated Pricing

Qty Low High
1+ $3.23 $3.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB051NE8NG Features

  • N-Channel MOSFET with 85V drain-source voltage.
  • 100A continuous drain current rating.
  • Low 5.1mOhm maximum on-resistance at 10V.
  • Surface-mount D2PAK (TO-263) package.
  • 300W maximum power dissipation at case temperature.

IPB051NE8NG Applications

  • High-efficiency DC-DC converter circuits.
  • Motor control and power management systems.
  • Switching power supplies and inverters.
  • Load switching and battery protection.

IPB051NE8NG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPB051NE8NG?

The maximum drain-source voltage (Vdss) is 85V.

What is the maximum continuous drain current?

The maximum continuous drain current is 100A at case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 5.1mOhm at Vgs=10V and Id=100A.

What package is the IPB051NE8NG available in?

It is available in a surface-mount TO-263-3 (D2PAK) package, supplier device package PG-TO263-3-2.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPB051NE8NG RoHS compliant?

Yes, it is listed as RoHS3 compliant.

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