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IPB049N08N5 The Infineon IPB049N08N5 is an 80V N-channel Power MOSFET designed for high-frequency switching and DC/DC converters. It features low on-resistance and is supplied in a PG-TO 263-3 package.
Mfr Part #:

IPB049N08N5

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB049N08N5 is an 80V N-channel Power MOSFET designed for high-frequency switching and DC/DC converters. It features low on-resistance and is supplied in a PG-TO 263-3 package.
✓ Total Stock: 1,440 pcs

IPB049N08N5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,340 pcs
On Request
1340 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
100 pcs
On Request
100 pcs On Request 1 On Request On Request 1618+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB049N08N5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Halogen Free
Mounting Type
Package / Case
Power Dissipation
SVHC Present
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IPB049N08N5 Description

Short technical summary and product information.

The Infineon IPB049N08N5 is an 80V N-channel Power MOSFET from the OptiMOS 5 family. It is optimized for high-frequency switching applications and DC/DC converters, offering a very low on-resistance of 4.9 mΩ maximum.

 

Key electrical parameters include a maximum drain-source voltage (VDS) of 80V and a continuous drain current (ID) of 80A at 25°C. The device also features a low gate charge (QG) of 42 nC and output charge (Qoss) of 51 nC, contributing to its excellent figure of merit (FOM).

 

This MOSFET is designed for reliability, with 100% avalanche tested and qualified according to JEDEC standards. It is supplied in a PG-TO 263-3 surface-mount package, suitable for various power management applications. The component is Pb-free and Halogen-free compliant.

IPB049N08N5 Quick Information

Product Type: N-channel MOSFET
Series: OptiMOS 5
Canonical Name: Infineon IPB049N08N5 N-channel Power MOSFET
Subcategory: N-channel

IPB049N08N5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB049N08N5 Features

  • 80V drain-source voltage rating.
  • Low 4.9 mΩ maximum on-resistance.
  • High 80A continuous drain current.
  • Optimized for DC/DC converters.
  • PG-TO 263-3 surface mount package.

IPB049N08N5 Applications

  • Ideal for high-frequency switching.
  • Suitable for sync. rectifiers.
  • Optimized for DC/DC converters.
  • Power management applications.

IPB049N08N5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPB049N08N5?

The maximum drain-source voltage (VDS) for the IPB049N08N5 is 80V.

What is the maximum on-resistance of the IPB049N08N5 MOSFET?

The maximum on-resistance (RDS(on)) for the IPB049N08N5 is 4.9 mΩ.

What is the continuous drain current rating for the IPB049N08N5?

The continuous drain current (ID) for the IPB049N08N5 is rated at 80A at 25°C and 80A at 100°C.

What package type is the IPB049N08N5 MOSFET supplied in?

The IPB049N08N5 MOSFET is supplied in a PG-TO 263-3 package.

What is the operating temperature range for the IPB049N08N5?

The operating and storage temperature range for the IPB049N08N5 is -55 to 175 °C.

Is the IPB049N08N5 RoHS compliant?

Yes, the IPB049N08N5 is RoHS3 Compliant.

Is the IPB049N08N5 halogen-free?

Yes, the IPB049N08N5 is Halogen-free.

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