| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB048N06LG is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications.
Key electrical specifications include a maximum drain-source voltage of 60V, a continuous drain current of 100A at case temperature, and a low on-resistance of 4.7mOhm at 10V gate drive. The gate charge is 225nC and input capacitance is 7600pF, indicating moderate switching speed capability. The device can dissipate up to 300W and operates over a junction temperature range of -55°C to 175°C.
The MOSFET is housed in a TO-263-3 (D2PAK) surface-mount package with a supplier device package of PG-TO-263-3-2. It is suitable for automated assembly and applications requiring high current handling in a compact footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
| 200+ | $0.50 | $0.50 |
| 500+ | $0.48 | $0.48 |
| 1,000+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-263-3 (D2PAK) surface mount.
-55°C to 175°C junction temperature.
RoHS3 Compliant (unverified).
4.7mOhm maximum at Vgs=10V, Id=100A.
100A at case temperature.
225nC maximum at Vgs=10V.