| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,556 pcs
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1556 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
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| Power Dissipation |
The Infineon IPB044N15N5 is an OptiMOS 5 series N-channel power MOSFET designed for high-frequency switching and synchronous rectification applications. It features a maximum drain-source voltage of 150V and a very low on-resistance of 4.4 mΩ at the TO263 package. The device can handle a continuous drain current of up to 174A at 25°C.
With a maximum operating temperature of 175°C, this MOSFET is suitable for demanding applications. It is constructed with Pb-free lead plating and is RoHS compliant, also meeting halogen-free standards according to IEC61249-2-21. The component is housed in a PG-TO263-7 surface-mount package.
Key performance parameters include a very low reverse recovery charge (Qrr) of 42 nC, contributing to efficient switching. The MOSFET is qualified according to JEDEC standards for target applications, making it a reliable choice for power electronics designs.
The maximum drain-source voltage (VDS) for the IPB044N15N5 is 150 V.
The maximum on-resistance (RDS(on)) for the IPB044N15N5 in a TO263 package is 4.4 mΩ.
The continuous drain current (ID) at 25°C is 174 A.
The maximum operating and storage temperature (Tj, Tstg) for the IPB044N15N5 is 175°C.
The IPB044N15N5 is supplied in the PG-TO263-7 package.
The IPB044N15N5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.