| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB042N10N3GATMA1 is an N-Channel power MOSFET from Infineon's OptiMOS 3 family, designed for high-efficiency power conversion. It has a maximum drain-source voltage of 100V and a continuous drain current of 137A at Tc=25°C, with pulsed current capability up to 548A. The device exhibits an ultra-low maximum on-resistance of 4.2mΩ at Vgs=10V, which contributes to reduced conduction losses.
This MOSFET is built with Infineon's advanced OptiMOS 3 technology, enabling high-frequency switching and synchronous rectification. The typical gate charge is 117nC at Vgs=10V, and input capacitance is 8410pF at Vds=50V, supporting fast switching transitions. It is qualified to JEDEC standards and operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 214W at Tc=25°C.
The IPB042N10N3GATMA1 is supplied in the PG-TO263-3 (D2PAK) surface-mount package with gull wing leads, suitable for automated assembly. The device is Pb-free, RoHS compliant, and halogen-free per IEC61249-2-21. It is also available in tape and reel packaging under the ordering code IPB042N10N3G.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.52 | $3.52 |
| 10+ | $2.29 | $2.29 |
| 100+ | $1.61 | $1.61 |
| 500+ | $1.39 | $1.39 |
| 1,000+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100 V.
The continuous drain current is 137 A at Tc=25°C and 105 A at Tc=100°C.
The maximum on-resistance is 4.2 mΩ at Id=50 A and Vgs=10 V.
It is supplied in a PG-TO263-3 (D2PAK) surface-mount package with 2 leads plus tab and gull wing lead style.
The operating junction temperature range is -55°C to 175°C.
Yes, the datasheet states the device is RoHS compliant with Pb-free lead plating.
The maximum gate threshold voltage is 3.5 V at a drain current of 150 µA.