IPB039N10N3GATMA1 N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 160A continuous drain current. Features low on-resistance of 3.9mOhm and surface mount TO263-7 package.
Mfr Part #:

IPB039N10N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 160A continuous drain current. Features low on-resistance of 3.9mOhm and surface mount TO263-7 package.
✓ Total Stock: 2,020 pcs
$ Price Range: $1.22 - $3.55

IPB039N10N3GATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,020 pcs
2020 pcs On Request 1 On Request On Request On Request On Request On Request

IPB039N10N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB039N10N3GATMA1 Description

Short technical summary and product information.

The IPB039N10N3GATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for high-current switching applications with a drain-source voltage rating of 100V and a continuous drain current of 160A at 25°C case temperature. The device features a low on-resistance of 3.9mOhm maximum at 100A drain current and 10V gate drive.

 

Key electrical characteristics include a gate threshold voltage of 3.5V maximum at 160µA, total gate charge of 117nC at 10V, and input capacitance of 8410pF at 50V drain-source voltage. The MOSFET supports drive voltages of 6V and 10V for optimized Rds(on) performance. Maximum power dissipation is 214W at 25°C case temperature.

 

The device is housed in a surface mount TO-263-7 package (also known as D²Pak with 6 leads plus tab), with supplier package designation PG-TO263-7. It operates over a junction temperature range of -55°C to 175°C. The component is marked as RoHS3 compliant, though this status is unverified.

IPB039N10N3GATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: Infineon IPB039N10N3GATMA1 N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPB039N10N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB039N10N3GATMA1 Estimated Pricing

Qty Low High
1+ $3.55 $3.55
10+ $2.31 $2.31
100+ $2.00 $2.00
1,000+ $1.70 $1.70
2,000+ $1.35 $1.35
5,000+ $1.22 $1.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB039N10N3GATMA1 Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 160A.
  • Low on-resistance of 3.9mOhm.
  • Surface mount PG-TO263-7 package.
  • Operating temperature range -55°C to 175°C.

IPB039N10N3GATMA1 Applications

  • Used in high-current power switching circuits.
  • Suitable for DC-DC converters and motor drives.
  • Ideal for automotive and industrial applications.
  • Applicable in battery management systems.

IPB039N10N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What is the continuous drain current?

160A at Tc=25°C.

What is the on-resistance?

3.9mOhm maximum at 100A drain current and 10V gate-source voltage.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

What package is this MOSFET available in?

TO-263-7, D²Pak (6 Leads + Tab), supplier package PG-TO263-7.

Is this component RoHS compliant?

RoHS3 compliant (unverified).

What is the gate charge?

117nC maximum at 10V gate-source voltage.

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