| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB036N12N3GATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It features a drain-source voltage rating of 120V and a continuous drain current of 180A at case temperature.
The device delivers a maximum on-resistance of 3.6mOhm at 100A drain current and 10V gate drive, enabling high efficiency in power conversion. Gate threshold voltage is 4V maximum. Input capacitance is 13800pF and total gate charge is 211nC.
Housed in a TO-263-7 (D²Pak) package with 6 leads plus tab for surface mount assembly. Power dissipation is 300W and junction temperature range is -55°C to 175°C. RoHS3 compliant, REACH unaffected (both unverified). MSL rating 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $7.60 | $7.60 |
| 10+ | $5.14 | $5.14 |
| 100+ | $3.75 | $3.75 |
| 500+ | $3.59 | $3.59 |
| 1,000+ | $3.39 | $3.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V.
180A at case temperature.
3.6mOhm maximum at 100A drain current and 10V gate drive.
4V maximum at a drain current of 270µA.
-55°C to 175°C (junction).
TO-263-7 (D²Pak) with 6 leads plus tab, surface mount.
Yes, RoHS3 compliant (unverified).