| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,630 pcs
|
1630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 1545+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type |
The Infineon IPB036N12N3G is a high-performance power transistor designed for various electronic applications. It is manufactured by Infineon and comes in a TO-263 package, suitable for surface mounting.
Key electrical specifications include a breakdown voltage of 120V and a low drain-source on-resistance of 3.6mΩ, ensuring efficient power handling. The threshold voltage is 3V, and input capacitance is 10.4nF. It also features fast switching times with a rise time of 52ns and a fall time of 21ns.
This power transistor can operate across a wide temperature range, from -55°C to 175°C, with a maximum power dissipation of 300W. Its robust design makes it suitable for demanding applications where reliability and performance are critical.
The IPB036N12N3G is a single-channel device, offering a compact solution for power management circuits. Its surface-mount package simplifies integration into printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-263 surface-mount package.
-55°C to 175°C.
120V.
3V.
3.6mΩ.
300W.
52ns rise, 21ns fall.