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IPB035N08N3G The Infineon IPB035N08N3G is a surface-mount N-Channel MOSFET. It offers an 80V drain-source voltage and a low 3.5mΩ drain-source resistance.
Mfr Part #:

IPB035N08N3G

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB035N08N3G is a surface-mount N-Channel MOSFET. It offers an 80V drain-source voltage and a low 3.5mΩ drain-source resistance.
✓ Total Stock: 7,000 pcs
$ Price Range: $2.40

IPB035N08N3G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,000 pcs
On Request
7000 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPB035N08N3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Input Capacitance
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IPB035N08N3G Description

Short technical summary and product information.

The Infineon IPB035N08N3G is a high-performance N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 80V and a low on-resistance of 3.5mΩ, ensuring efficient power transfer.

 

This MOSFET is housed in a TO-263 package, suitable for surface mounting. It has a maximum power dissipation of 214W and operates within a temperature range of -55°C to 175°C. The component also includes specifications for input capacitance, rise time, and fall time, providing detailed electrical characteristics for design integration.

 

Key electrical parameters include an input capacitance of 6.1nF, a rise time of 79ns, and a fall time of 14ns. These specifications are crucial for understanding the switching performance and signal integrity in various circuit designs. The device is manufactured by Infineon Technologies, a recognized leader in power semiconductor solutions.

IPB035N08N3G Quick Information

Product Type: Power Transistor
Series: OptiMOS 3
Canonical Name: Infineon IPB035N08N3G N-Channel MOSFET
Subcategory: N-Channel

IPB035N08N3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB035N08N3G Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB035N08N3G Features

  • 80V drain-source voltage rating.
  • Low 3.5mΩ drain-source resistance.
  • 214W maximum power dissipation.
  • Surface mount TO-263 package.
  • Wide operating temperature range.

IPB035N08N3G Applications

  • Suitable for DC-DC converter circuits.
  • Used in motor drive applications.
  • Ideal for power management systems.
  • Operates in automotive environments.
  • Compatible with high-frequency switching.

IPB035N08N3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPB035N08N3G?

80V.

What package is the IPB035N08N3G available in?

TO-263 surface mount package.

What is the operating temperature range of the IPB035N08N3G?

-55°C to 175°C.

What is the on-resistance of the IPB035N08N3G?

3.5mΩ.

What is the maximum power dissipation of the IPB035N08N3G?

214W.

What is the input capacitance of the IPB035N08N3G?

6.1nF.

What are the rise and fall times of the IPB035N08N3G?

Rise time is 79ns, fall time is 14ns.

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