| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB033N10N5LFATMA1 is an N-Channel enhancement mode MOSFET from Infineon's OptiMOS 5 Linear FET family. Designed for hot-swap and e-fuse applications, it combines very low on-resistance with a wide safe operating area (SOA).
Key electrical ratings include a drain-source voltage of 100V, continuous drain current up to 159A (Tc=25°C), and a maximum on-resistance of 3.3mΩ at 10V gate drive. The device features a gate threshold voltage of 4.1V, total gate charge of 102nC, and input capacitance of 460pF. Single pulse avalanche energy is rated at 273mJ.
The MOSFET is housed in a surface-mount PG-TO263-3 package (D²Pak) and is qualified to JEDEC standards. It supports an operating junction temperature range of -55°C to 150°C and is rated for 179W maximum power dissipation at Tc=25°C. The device is Pb-free, RoHS compliant, and halogen-free per IEC61249-2-21, with MSL 1 moisture sensitivity level.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.49 | $6.49 |
| 10+ | $4.36 | $4.36 |
| 100+ | $3.14 | $3.14 |
| 500+ | $2.91 | $2.91 |
| 1,000+ | $2.72 | $2.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) is 100 V.
It is available in a surface-mount TO-263-3 (D²Pak) package, supplier device package PG-TO263-3.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant (Pb-free plating) as stated in the datasheet.
The maximum continuous drain current is 159 A at Tc=25°C and 108 A at Tc=100°C.
The maximum on-resistance is 3.3 mΩ at 100 A drain current and 10 V gate-source voltage.
The maximum total gate charge is 102 nC at 10 V gate-source voltage.