IPB033N10N5LF The Infineon IPB033N10N5LF is an N-channel MOSFET designed for hot-swap and e-fuse applications. It offers a 100V drain-source voltage and a low on-resistance of 3.3mOhm.
Mfr Part #:

IPB033N10N5LF

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB033N10N5LF is an N-channel MOSFET designed for hot-swap and e-fuse applications. It offers a 100V drain-source voltage and a low on-resistance of 3.3mOhm.
✓ Total Stock: 9,132 pcs

IPB033N10N5LF Available from 2 distributors

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IPB033N10N5LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Lead Style
Mounting Type
Package / Case
Power Dissipation
Tape & Reel

IPB033N10N5LF Description

Short technical summary and product information.

The Infineon IPB033N10N5LF is a high-performance N-channel MOSFET from the OptiMOSTM 5 series, specifically designed for demanding applications such as hot-swap and electronic fuses (e-fuses).

 

This device features a maximum drain-source voltage (VDS) of 100V and a very low on-state resistance (RDS(on)) of 3.3mΩ at a gate-source voltage (VGS) of 10V. It can handle a continuous drain current (ID) of up to 159A at 25°C case temperature, with a pulsed drain current capability of 636A. The MOSFET is 100% avalanche tested, ensuring robustness in transient conditions.

 

Packaged in a PG-TO263-3 surface-mount package, the IPB033N10N5LF is suitable for applications requiring efficient power switching and high current handling. Its normal level gate drive makes it compatible with standard logic levels. The device is Pb-free and RoHS compliant, with halogen-free plating according to IEC61249-2-21 standards.

 

Key electrical characteristics include a maximum power dissipation of 179W at 25°C and a wide operating temperature range from -55°C to 150°C. The low on-resistance and wide safe operating area (SOA) contribute to efficient operation and thermal management in power systems.

IPB033N10N5LF Quick Information

Product Type: N-channel MOSFET
Series: LinearFET
Canonical Name: Infineon OptiMOSTM 5 LinearFET N-channel MOSFET
Subcategory: N-Channel

IPB033N10N5LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB033N10N5LF Features

  • 100V drain-source voltage rating.
  • Very low 3.3mOhm on-resistance.
  • High 159A continuous drain current.
  • Ideal for hot-swap and e-fuse.
  • Pb-free and RoHS compliant.

IPB033N10N5LF Applications

  • Suitable for hot-swap circuits.
  • Used in electronic fuse applications.
  • Power management solutions.
  • High current switching tasks.

IPB033N10N5LF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPB033N10N5LF MOSFET?

The maximum drain-source voltage (VDS) for the IPB033N10N5LF is 100V.

What is the maximum on-resistance of the IPB033N10N5LF?

The maximum on-resistance (RDS(on)) for the IPB033N10N5LF is 3.3mΩ.

What is the continuous drain current rating of the IPB033N10N5LF at 25°C?

The continuous drain current (ID) rating for the IPB033N10N5LF is 159A at 25°C case temperature.

What package type is the IPB033N10N5LF MOSFET supplied in?

The IPB033N10N5LF MOSFET is supplied in the PG-TO263-3 package.

Is the IPB033N10N5LF MOSFET RoHS compliant?

Yes, the IPB033N10N5LF is RoHS3 compliant.

Does the IPB033N10N5LF MOSFET meet Halogen-free standards?

Yes, the IPB033N10N5LF is halogen-free according to IEC61249-2-21.

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