| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation | |
| SVHC Present |
The Infineon IPB032N10N5 is an N-channel OptiMOS 5 power MOSFET designed for high-frequency switching and synchronous rectification applications. It features a maximum drain-source voltage of 100V and a very low on-resistance of 3.2 mΩ at VGS=10V and ID=82A. The continuous drain current is rated at 166A at 25°C case temperature.
This MOSFET offers an excellent gate charge x RDS(on) product (FOM), making it ideal for efficient power conversion. It is 100% avalanche tested and comes in a PG-TO263-7 package suitable for surface mounting.
The device is Pb-free plating and RoHS compliant, as well as halogen-free according to IEC61249-2-21. It is qualified according to JEDEC for target applications.
The maximum drain-source voltage is 100 V.
The maximum on-resistance is 3.2 mΩ at VGS=10V and ID=82A.
The continuous drain current is 166 A at TC=25°C and 118 A at TC=100°C.
The operating junction and storage temperature range is -55°C to 175°C.
The device is packaged in a PG-TO263-7 (D2PAK) surface mount package.
Yes, the device has lead-free plating (Pb-free).
Yes, the device is halogen-free.