IPB031N08N5ATMA1 N-Channel MOSFET from Infineon with 80V drain-source voltage and 120A continuous drain current. Features low on-resistance of 3.1mOhm and is housed in a D2PAK (TO-263) surface-mount package.
Mfr Part #:

IPB031N08N5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon with 80V drain-source voltage and 120A continuous drain current. Features low on-resistance of 3.1mOhm and is housed in a D2PAK (TO-263) surface-mount package.
✓ Total Stock: 83 pcs
$ Price Range: $1.28 - $3.70

IPB031N08N5ATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPB031N08N5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB031N08N5ATMA1 Description

Short technical summary and product information.

The IPB031N08N5ATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 5 family. It is designed for high-frequency switching and synchronous rectification applications. The device features a maximum drain-source voltage of 80V and a continuous drain current of 120A at 25°C case temperature. On-resistance is typically 3.1mOhm maximum at 100A and 10V gate drive. Gate charge is 87nC at 10V, and input capacitance is 6240pF at 40V drain-source voltage, enabling efficient high-speed switching.

 

The MOSFET is 100% avalanche tested and offers a maximum power dissipation of 167W. It operates over a junction temperature range of -55°C to 175°C. The device is housed in a surface-mount D2PAK (TO-263-3) package with a PG-TO263-3 supplier package designation. It features Pb-free plating and is halogen-free according to IEC61249-2-21, with RoHS compliance confirmed in the datasheet.

 

Typical applications include power management systems, DC-DC converters, and motor control circuits where low conduction and switching losses are critical. The OptiMOS 5 technology provides an excellent figure of merit (gate charge x on-resistance) for high-efficiency designs.

IPB031N08N5ATMA1 Quick Information

Product Type: N-Channel Power MOSFET
Series: OptiMOS 5
Canonical Name: Infineon IPB031N08N5ATMA1 N-Channel MOSFET
Subcategory: N-Channel MOSFET

IPB031N08N5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free plating

IPB031N08N5ATMA1 Estimated Pricing

Qty Low High
1+ $3.70 $3.70
10+ $2.42 $2.42
100+ $1.68 $1.68
500+ $1.48 $1.48
1,000+ $1.48 $1.48
5,000+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB031N08N5ATMA1 Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • Continuous drain current rating of 120A.
  • Low on-resistance of 3.1 milliohms.
  • Optimized for high-frequency switching applications.
  • Surface-mount D2PAK (TO-263) package.

IPB031N08N5ATMA1 Applications

  • Ideal for high frequency switching circuits.
  • Used in synchronous rectification designs.
  • Suitable for power management systems.
  • Applicable in DC-DC converter stages.

IPB031N08N5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

80V.

What package is the IPB031N08N5ATMA1 available in?

TO-263-3 (D²Pak) surface-mount package.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the IPB031N08N5ATMA1 RoHS compliant?

Yes, RoHS3 compliant and halogen-free according to IEC61249-2-21.

What is the gate charge?

87 nC at 10V.

What is the on-resistance?

3.1 milliohms maximum at 100A, 10V.

What is the continuous drain current?

120A at 25°C case temperature.

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