Mfr Part #:

IPB030N08N3GATMA1

Infineon IPB030N08N3GATMA1 is an N-Channel MOSFET rated at 80V drain-source voltage and 160A continuous drain current with low 3mOhm on-resistance. Surface mount in TO-263-7 package.

✓ Total Stock: 3,020 pcs

$ Price Range: $1.51 - $4.65

IPB030N08N3GATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,020 pcs On Request	3020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB030N08N3GATMA1 Description

Short technical summary and product information.

The IPB030N08N3GATMA1 from Infineon Technologies is a high-performance N-Channel enhancement-mode power MOSFET. It features a drain-source voltage rating of 80V and a continuous drain current of 160A at 25°C case temperature. The device offers a low on-resistance of 3mOhm maximum at Vgs=10V and Id=100A, enabling high-efficiency power conversion.

This MOSFET is designed for switching applications requiring high current handling and low conduction losses. It has a maximum gate charge of 117nC at 10V gate drive and an input capacitance of 8110pF at 40V drain-source voltage. The gate threshold voltage is 3.5V maximum at Id=155µA, and the recommended drive voltage range is 6V to 10V. The device can dissipate up to 214W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C.

The part is housed in a surface-mount PG-TO263-7 package (TO-263-7, D²Pak with 6 leads plus tab), suitable for automated assembly. It is designed for use in power management circuits, DC-DC converters, and motor control systems where high efficiency and reliability are required.

IPB030N08N3GATMA1 Quick Information

Product Type: MOSFET (Metal Oxide)

Canonical Name: Infineon IPB030N08N3GATMA1 N-Channel MOSFET

Subcategory: Power MOSFET

IPB030N08N3GATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPB030N08N3GATMA1 Estimated Pricing

Qty	Low	High
1+	$4.65	$4.65
10+	$3.06	$3.06
50+	$2.38	$2.38
100+	$2.16	$2.16
500+	$1.85	$1.85
1,000+	$1.66	$1.66
3,000+	$1.51	$1.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB030N08N3GATMA1 Features

N-Channel MOSFET with 80V drain-source voltage.
Continuous drain current up to 160A at 25°C.
Low on-resistance of 3mOhm maximum.
High gate charge of 117nC for fast switching.
Surface mount package PG-TO263-7.

IPB030N08N3GATMA1 Applications

High-efficiency DC-DC converter designs.
Motor control and drive systems.
Power management and regulation circuits.
Synchronous rectification in power supplies.
Battery protection and management.

IPB030N08N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPB030N08N3GATMA1?

80V.

What is the continuous drain current rating?

160A at 25°C case temperature.

What is the on-resistance (Rds(on)) of this MOSFET?

3mOhm maximum at Id=100A, Vgs=10V.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

What package type is the IPB030N08N3GATMA1 available in?

TO-263-7, D²Pak (6 Leads + Tab) / PG-TO263-7.

Is the IPB030N08N3GATMA1 RoHS compliant?

RoHS3 compliant status is marked as unverified in the database.

What is the gate threshold voltage (Vgs(th))?

3.5V maximum at Id=155µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	160 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	117 nC
Input Capacitance (Ciss) (Max) @ Vds	8110 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	3.5 V