IPB027N10N3GATMA1 Infineon IPB027N10N3GATMA1 is an N-Channel power MOSFET with 100V drain-source voltage and 120A continuous drain current. It features a low 2.7mΩ on-resistance and is housed in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

IPB027N10N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPB027N10N3GATMA1 is an N-Channel power MOSFET with 100V drain-source voltage and 120A continuous drain current. It features a low 2.7mΩ on-resistance and is housed in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 17,020 pcs
$ Price Range: $2.65 - $6.02

IPB027N10N3GATMA1 Available from 1 distributor

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IPB027N10N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB027N10N3GATMA1 Description

Short technical summary and product information.

The Infineon IPB027N10N3GATMA1 is an N-Channel enhancement mode power MOSFET built with advanced MOSFET technology. It is designed for high-efficiency power conversion applications requiring low on-resistance and high current capability.

 

Key electrical specifications include a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 120A at case temperature, and a maximum on-resistance (Rds(on)) of just 2.7mΩ at Vgs = 10V and Id = 100A. The device can dissipate up to 300W and operates over a junction temperature range of -55°C to 175°C.

 

The MOSFET is offered in a surface-mount D2PAK (TO-263-3) package, also known as PG-TO263-3, which is suitable for automated assembly. It requires a gate drive voltage of 6V to 10V for optimal performance and has a maximum gate threshold voltage of 3.5V.

IPB027N10N3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies IPB027N10N3GATMA1 N-Channel MOSFET, 100V, 120A, D2PAK
Subcategory: N-Channel Power MOSFET

IPB027N10N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB027N10N3GATMA1 Estimated Pricing

Qty Low High
1+ $6.02 $6.02
10+ $4.09 $4.09
100+ $3.05 $3.05
500+ $2.80 $2.80
1,000+ $2.65 $2.65

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB027N10N3GATMA1 Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • 120A continuous drain current at case temperature.
  • Low 2.7mΩ maximum on-resistance at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package for automated assembly.
  • Wide operating temperature range from -55°C to 175°C.

IPB027N10N3GATMA1 Applications

  • Suitable for high-efficiency DC-DC converters.
  • Used in motor control and power management systems.
  • Ideal for high-current switching power supplies.
  • Applicable in automotive and industrial power circuits.

IPB027N10N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPB027N10N3GATMA1?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current (Id) is 120A at case temperature (Tc).

What is the on-resistance (Rds(on)) of the IPB027N10N3GATMA1?

The maximum on-resistance is 2.7mΩ at Vgs = 10V and Id = 100A.

What package does the IPB027N10N3GATMA1 come in?

It is available in a surface-mount D2PAK (TO-263-3) package, also designated as PG-TO263-3.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

Is the IPB027N10N3GATMA1 RoHS compliant?

The part is listed as RoHS3 Compliant, though this status is unverified.

What is the maximum power dissipation of this device?

The maximum power dissipation is 300W at case temperature (Tc).

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