| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,389 pcs
|
8389 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB026N06NATMA1 is an N-Channel enhancement mode power MOSFET from Infineon's OptiMOS family, optimized for synchronous rectification. It is 100% avalanche tested and offers superior thermal resistance. The device is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21.
Key electrical specifications include a drain-source breakdown voltage of 60V, continuous drain current of 100A at case temperature 25°C, and pulsed drain current up to 400A. The on-resistance is typically 2.3 mOhm (max 2.6 mOhm) at VGS=10V. Total gate charge is 56 nC, enabling efficient switching at high frequencies. The device is rated for an operating junction temperature range of -55°C to 175°C.
The MOSFET is packaged in a D2PAK (TO-263-3) surface mount package with supplier device package PG-TO263-3. Thermal resistance from junction to case is 1.1 K/W, allowing effective heat dissipation. The device is suitable for applications requiring high current handling and low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.43 | $4.43 |
| 10+ | $2.92 | $2.92 |
| 100+ | $2.06 | $2.06 |
| 500+ | $1.74 | $1.74 |
| 1,000+ | $1.44 | $1.44 |
| 2,000+ | $1.42 | $1.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It comes in a D2PAK (TO-263-3) surface mount package, also known as PG-TO263-3.
-55°C to 175°C (junction temperature).
Yes, it is RoHS3 compliant with Pb-free lead plating.
Total gate charge is typically 56 nC at VGS=10 V.
Typical on-resistance is 2.3 mOhm, maximum 2.6 mOhm at VGS=10 V and ID=100 A.
Single pulse avalanche energy is 110 mJ at ID=100 A and RGS=25 Ω.
Yes, it is halogen-free according to IEC61249-2-21.