IPB025N10N3GATMA1 N-Channel MOSFET rated at 100V drain-source voltage and 180A continuous drain current. Features low 2.5mOhm on-resistance in a surface-mount TO263-7 package.
Mfr Part #:

IPB025N10N3GATMA1

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET rated at 100V drain-source voltage and 180A continuous drain current. Features low 2.5mOhm on-resistance in a surface-mount TO263-7 package.
✓ Total Stock: 154,079 pcs
$ Price Range: $2.40 - $6.32

IPB025N10N3GATMA1 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
150,020 pcs
150020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 20+ On Request On Request
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59 pcs
59 pcs On Request 1 On Request On Request On Request On Request On Request

IPB025N10N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB025N10N3GATMA1 Description

Short technical summary and product information.

The IPB025N10N3GATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It is designed for high-current switching applications with a drain-source voltage rating of 100V and a continuous drain current of 180A at 25°C. The device features a low typical on-resistance of 2.5mOhm at 10V gate drive, which minimizes conduction losses. The MOSFET is housed in a surface-mount PG-TO263-7 package (D²Pak with 6 leads plus tab), suitable for automated assembly. It can operate over a junction temperature range of -55°C to 175°C, making it robust for demanding environments. The gate threshold voltage is 3.5V maximum, and the gate charge is 206nC at 10V, enabling efficient switching. The part is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).

IPB025N10N3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: IPB025N10N3GATMA1 N-Channel MOSFET
Subcategory: Power MOSFET

IPB025N10N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB025N10N3GATMA1 Estimated Pricing

Qty Low High
1+ $6.32 $6.32
10+ $4.14 $4.14
100+ $3.31 $3.31
1,000+ $2.80 $2.80
2,000+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB025N10N3GATMA1 Features

  • N-Channel enhancement mode MOSFET.
  • Rated for 100V drain-source voltage.
  • Continuous drain current of 180A at 25°C.
  • Low on-resistance of 2.5mOhm typical.
  • Surface mount TO263-7 package.

IPB025N10N3GATMA1 Applications

  • Suitable for high-current switching applications.
  • Used in DC-DC converters and power supplies.
  • Ideal for motor control and automotive systems.
  • Applies to synchronous rectification circuits.

IPB025N10N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of IPB025N10N3GATMA1?

The drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating?

The continuous drain current is 180A at 25°C case temperature.

What is the on-resistance (Rds(on)) of this MOSFET?

The maximum on-resistance is 2.5mOhm at 100A drain current and 10V gate drive.

What package does the IPB025N10N3GATMA1 come in?

It comes in a surface-mount TO-263-7 (D²Pak with 6 leads plus tab) package, also known as PG-TO263-7.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the IPB025N10N3GATMA1 RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified and should be confirmed from the official datasheet.

What is the gate charge of this MOSFET?

The maximum total gate charge is 206nC at 10V gate voltage.

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