| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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599 pcs
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599 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB025N08N3GATMA1 is an N-Channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS 3 product family. This power transistor supports a maximum drain-to-source voltage of 80V and a continuous drain current of 120A at a case temperature of 25°C. It features a very low maximum on-resistance of 2.5mΩ when driven with a 10V gate voltage, contributing to high efficiency in power conversion circuits.
Designed for high-frequency switching, the device offers an excellent gate charge times on-resistance figure of merit. The total gate charge is rated at 206nC maximum at a 10V gate drive, and the input capacitance is 14200pF at a 40V drain-source voltage. Synchronous rectification and switch-mode power supplies benefit from the low switching losses enabled by these characteristics.
Packaged in a surface-mount TO-263-3 (D2PAK) outline, the IPB025N08N3GATMA1 is suitable for automated assembly. Thermal performance is supported by a maximum power dissipation of 300W at 25°C case temperature and a junction-to-case thermal resistance of 0.5 K/W. The operating junction temperature range spans -55°C to 175°C.
The device is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21. It is qualified to JEDEC standards, making it suitable for demanding industrial and automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.37 | $5.37 |
| 10+ | $3.58 | $3.58 |
| 100+ | $2.56 | $2.56 |
| 500+ | $2.48 | $2.48 |
| 1,000+ | $2.48 | $2.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 80V.
The continuous drain current (Id) is 120A at a case temperature of 25°C.
The maximum drain-source on-resistance is 2.5mΩ at Id=100A and Vgs=10V.
The operating junction temperature range is -55°C to 175°C.
The device comes in a TO-263-3 (D2PAK) surface-mount package with supplier package code PG-TO263-3.
Yes, the IPB025N08N3GATMA1 is RoHS compliant and halogen-free according to IEC61249-2-21.
The total gate charge (Qg) is 206nC maximum at a gate-source voltage of 10V.