IPB022N04LG IPB022N04LG is an N-Channel power MOSFET from Infineon Technologies. It features 40V drain-source voltage, 90A continuous drain current, and ultra-low 2.2mOhm on-resistance.
Mfr Part #:

IPB022N04LG

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPB022N04LG is an N-Channel power MOSFET from Infineon Technologies. It features 40V drain-source voltage, 90A continuous drain current, and ultra-low 2.2mOhm on-resistance.
✓ Total Stock: 2,910 pcs
$ Price Range: $0.69

IPB022N04LG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,910 pcs
2910 pcs On Request 1 On Request On Request 10+ On Request On Request

IPB022N04LG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB022N04LG Description

Short technical summary and product information.

The IPB022N04LG is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies using advanced MOSFET technology. This device is designed for high-efficiency power conversion applications. It features a maximum drain-source voltage of 40V and a continuous drain current of 90A at case temperature. The on-resistance is extremely low at 2.2mOhm max at 10V gate drive, minimizing conduction losses. The gate threshold voltage is 2V max at 95µA drain current. The device has a total gate charge of 166nC at 10V, and input capacitance of 13000pF at 20V drain-source bias. Power dissipation is rated at 167W at case temperature. The operating junction temperature range is -55°C to 175°C. The device is offered in a surface mount TO-263-3 (D2Pak) package, specifically the PG-TO263-3-2 supplier package. This package is suitable for high-power density designs. The MOSFET is RoHS3 compliant, MSL level 1, and REACH unaffected. It is intended for use in switching power supplies, motor control, and other power management circuits.

IPB022N04LG Quick Information

Product Type: Power MOSFET
Canonical Name: IPB022N04LG N-Channel Power MOSFET
Subcategory: Single MOSFET

IPB022N04LG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB022N04LG Estimated Pricing

Qty Low High
335+ $0.69 $0.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB022N04LG Features

  • N-Channel enhancement mode MOSFET.
  • 40V drain-source voltage rating.
  • 90A continuous drain current capability.
  • Ultra-low 2.2mOhm on-resistance.
  • Surface mount TO-263-3 package.

IPB022N04LG Applications

  • Used in high-efficiency DC-DC converters.
  • Suitable for motor control and power management.
  • Ideal for synchronous rectification stages.
  • Common in automotive and industrial applications.

IPB022N04LG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the IPB022N04LG?

Maximum drain-source voltage is 40V, and gate-source voltage is ±20V.

What package is the IPB022N04LG available in?

Surface mount TO-263-3 (D2Pak) with supplier package PG-TO263-3-2.

What is the operating temperature range?

Junction temperature range -55°C to 175°C.

Is the IPB022N04LG RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the maximum drain current?

90A continuous at case temperature.

What is the on-resistance?

2.2mOhm max at 10V gate drive and 90A.

What is the gate charge?

166nC max at 10V gate voltage.

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