| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34 pcs
|
34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB020NE7N3GATMA1 is an N-channel enhancement-mode MOSFET manufactured by Infineon Technologies. It is designed for high-current switching applications, capable of blocking up to 75V drain-to-source voltage and conducting up to 120A continuous drain current at Tc. The device features a very low maximum on-resistance of 2mOhm at Vgs=10V and Id=100A, which minimizes conduction losses in power conversion circuits.
Key electrical characteristics include a maximum gate threshold voltage of 3.8V at Id=273µA, maximum gate charge of 206nC at Vgs=10V, and input capacitance of 14400pF at Vds=37.5V. The gate-source voltage rating is ±20V, and the maximum power dissipation is 300W at Tc. The junction operating temperature range is -55°C to 175°C.
The part is supplied in a TO-263-3 (D²Pak) surface-mount package with supplier device package designation PG-TO263-3. This package supports high-power surface-mount designs and offers good thermal performance when mounted on an appropriate heatsink.
Because of its high current rating and low on-resistance, the device is well suited for power switching stages in DC-DC converters, power supplies, and similar high-current circuits. The part is recorded as RoHS3 compliant and has an MSL of 1 (unlimited), simplifying handling and assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.55 | $6.55 |
| 10+ | $4.39 | $4.39 |
| 50+ | $3.46 | $3.46 |
| 100+ | $3.17 | $3.17 |
| 500+ | $2.96 | $2.96 |
| 1,000+ | $2.96 | $2.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IPB020NE7N3GATMA1 has a maximum drain-to-source voltage (Vdss) of 75V.
It is available in a surface-mount TO-263-3 (D²Pak) package with supplier device package designation PG-TO263-3.
The operating junction temperature range is -55°C to 175°C.
The part is recorded as RoHS3 compliant in the product data.
The maximum continuous drain current is 120A at Tc.
The maximum on-resistance is 2mOhm at Vgs=10V and Id=100A.
The maximum gate charge is 206nC at Vgs=10V.