Mfr Part #:

IPB020N10N5ATMA1

Infineon IPB020N10N5ATMA1 is a 100V N-Channel MOSFET rated for 176A continuous drain current, featuring low 2mOhm on-resistance, suitable for high-frequency switching and synchronous rectification applications.

✓ Total Stock: 6,980 pcs

$ Price Range: $3.23 - $7.65

IPB020N10N5ATMA1 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	6,020 pcs On Request	6020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	960 pcs On Request	960 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPB020N10N5ATMA1 Description

Short technical summary and product information.

The IPB020N10N5ATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 5 family, designed for high-efficiency power conversion. It features a drain-source voltage rating of 100V and a continuous drain current of 176A at Tc=25°C (135A at Tc=100°C). The on-resistance is typically 1.7 mOhm and maximum 2.0 mOhm at Vgs=10V, enabling low conduction losses. The gate charge is typically 168 nC, and input capacitance is 12000 pF, making it suitable for high-frequency switching applications such as synchronous rectification and DC-DC converters. The device is packaged in a surface-mount D2PAK (TO-263-3) with supplier package PG-TO263-3, allowing for efficient heat dissipation through the exposed pad. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 375W at Tc=25°C. The MOSFET is RoHS compliant and features Pb-free lead plating, meeting environmental standards.

IPB020N10N5ATMA1 Quick Information

Product Type: MOSFET

Series: OptiMOS5

Canonical Name: Infineon IPB020N10N5ATMA1 N-Channel Power MOSFET

Subcategory: Power MOSFET

IPB020N10N5ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPB020N10N5ATMA1 Estimated Pricing

Qty	Low	High
1+	$7.65	$7.65
10+	$5.12	$5.12
100+	$4.11	$4.11
500+	$3.66	$3.66
1,000+	$3.23	$3.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB020N10N5ATMA1 Features

Very low on-resistance of 2 mOhm.
Rated for 100V drain-source voltage.
Continuous drain current up to 176A.
175°C maximum operating junction temperature.
RoHS compliant and Pb-free plating.

IPB020N10N5ATMA1 Applications

Ideal for high-frequency switching power supplies.
Used in synchronous rectification circuits.
Suitable for motor drive applications.
Can be used in battery management systems.

IPB020N10N5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

100V.

What is the package type?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package PG-TO263-3.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the component RoHS compliant?

RoHS3 Compliant (unverified).

What is the maximum continuous drain current?

176A at Tc=25°C, 135A at Tc=100°C.

What is the gate threshold voltage?

Typical 3V, maximum 3.8V at Id=270µA.

What is the on-resistance?

2.0 mOhm maximum at Vgs=10V, Id=100A; typical 1.7 mOhm.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	15600 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	2mOhm @ 100A, 10V
Supplier Device Package	PG-TO263-3
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	3.8V @ 270µA