| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
105 pcs
|
105 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Lead Style | |
| SVHC Present | |
| Tape & Reel |
The IPB020N10N5 is a single N-Channel MOSFET manufactured by Infineon. It is designed for applications requiring a drain-source breakdown voltage of at least 100V (tested at VGS=0V, ID=1mA). The device exhibits a typical gate threshold voltage of 3V (with a range of 2.2V to 3.8V) measured at VDS=VGS, ID=270µA. Its zero gate voltage drain current is typically 0.1µA at VDS=100V and 25°C junction temperature, indicating low off-state leakage. These electrical characteristics make it suitable for power switching and conversion circuits where 100V blocking capability and moderate gate drive requirements are needed. Package and mounting details are not specified in the available data.
The minimum drain-source breakdown voltage is 100V at VGS=0V, ID=1mA.
The typical gate threshold voltage is 3V, with a range of 2.2V to 3.8V measured at VDS=VGS, ID=270µA.
The zero gate voltage drain current is typically 0.1µA at VDS=100V and 25°C.
