IPB019N08N3GATMA1 The IPB019N08N3GATMA1 is an N-Channel MOSFET from Infineon Technologies. It features an 80V drain-source voltage, 180A continuous drain current, and a low on-resistance of 1.9mOhm.
Mfr Part #:

IPB019N08N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPB019N08N3GATMA1 is an N-Channel MOSFET from Infineon Technologies. It features an 80V drain-source voltage, 180A continuous drain current, and a low on-resistance of 1.9mOhm.
✓ Total Stock: 2,020 pcs
$ Price Range: $2.22 - $6.19

IPB019N08N3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPB019N08N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPB019N08N3GATMA1 Description

Short technical summary and product information.

The IPB019N08N3GATMA1 is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power switching. It has a maximum drain-source voltage of 80V and can handle a continuous drain current of 180A at case temperature. The on-resistance is typically 1.9mOhm at a gate drive of 10V and 100A drain current, minimizing conduction losses.

 

Additional electrical specifications include a maximum gate threshold voltage of 3.5V at 270µA, a total gate charge of 206nC at Vgs=10V, and an input capacitance of 14200pF at Vds=40V. The device can dissipate up to 300W at case temperature and operates over a junction temperature range of -55°C to 175°C.

 

The component is housed in a TO-263-7 (D2Pak) surface-mount package, which offers excellent thermal performance and is suitable for automated assembly. The mounting type is surface mount, and the supplier device package is PG-TO263-7.

 

This MOSFET is suitable for high-current switching applications such as power supplies, DC-DC converters, and motor drives where low conduction losses and high efficiency are critical.

IPB019N08N3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: N-Channel MOSFET 80V 180A
Subcategory: N-Channel Power MOSFET

IPB019N08N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB019N08N3GATMA1 Estimated Pricing

Qty Low High
1+ $6.19 $6.19
10+ $4.14 $4.14
100+ $2.98 $2.98
500+ $2.73 $2.73
1,000+ $2.59 $2.59
2,000+ $2.22 $2.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB019N08N3GATMA1 Features

  • N-channel MOSFET with 80V drain-source voltage.
  • Continuous drain current rating of 180A.
  • Low on-resistance of 1.9mOhm at 100A.
  • High power dissipation of 300W.
  • Surface-mount package TO-263-7 (D2Pak).

IPB019N08N3GATMA1 Applications

  • High-current power switching applications.
  • DC-DC converter output stages.
  • Motor drive and power management.

IPB019N08N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

80V max.

What is the continuous drain current?

180A at case temperature.

What is the on-resistance?

1.9mOhm max at 100A, 10V.

What is the gate threshold voltage?

3.5V max at 270µA.

What is the operating temperature range?

-55°C to 175°C.

What is the package type?

TO-263-7 (D2Pak) surface mount.

Is the component RoHS compliant?

RoHS3 Compliant (unverified).

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