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IPB019N08N3G The Infineon IPB019N08N3G is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 180A. It offers a power dissipation of 300W.
Mfr Part #:

IPB019N08N3G

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB019N08N3G is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 180A. It offers a power dissipation of 300W.
✓ Total Stock: 531 pcs
$ Price Range: $2.39

IPB019N08N3G Available from 1 distributor

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✓ Non-Authorised
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Braun Electronic Components ✓
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531 pcs
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531 pcs On Request 1 On Request On Request On Request On Request On Request
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IPB019N08N3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Power Dissipation
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IPB019N08N3G Description

Short technical summary and product information.

The Infineon IPB019N08N3G is a high-performance N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 80V and can handle a continuous drain current of up to 180A, with a significant power dissipation capability of 300W.

 

This MOSFET utilizes OptiMOS™ 3 technology and has an on-state resistance of 1.9mΩ, making it efficient for switching and power management tasks. The gate-source voltage is rated at ±20V, and it operates with a unipolar polarization and an enhancement mode channel.

 

Packaged in the PG-TO263-7 case, the IPB019N08N3G is designed for surface-mount (SMD) applications. Its robust specifications make it suitable for various power electronics designs where high current and voltage handling are required.

IPB019N08N3G Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies IPB019N08N3G N-Channel MOSFET
Subcategory: N-Channel

IPB019N08N3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB019N08N3G Estimated Pricing

Qty Low High
1+ $2.39 $2.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB019N08N3G Features

  • 80V drain-source voltage rating.
  • 180A continuous drain current.
  • 300W maximum power dissipation.
  • Low 1.9mΩ on-state resistance.
  • PG-TO263-7 SMD package.

IPB019N08N3G Applications

  • Suitable for high-power switching.
  • Efficient for power management.
  • Used in demanding electronic circuits.
  • Ideal for surface-mount designs.

IPB019N08N3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPB019N08N3G?

80V.

What is the continuous drain current rating?

180A.

What is the typical on-state resistance?

1.9mΩ.

What technology is used in this MOSFET?

OptiMOS 3.

What is the maximum power dissipation?

300W.

What is the package type of the IPB019N08N3G?

PG-TO263-7 surface mount package.

What is the mounting type?

Surface mount (SMD).

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