IPB017N10N5ATMA1 N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 1.7 mOhm maximum on-resistance. Rated for 273A continuous drain current at 25°C.
Mfr Part #:

IPB017N10N5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 1.7 mOhm maximum on-resistance. Rated for 273A continuous drain current at 25°C.
✓ Total Stock: 5,020 pcs
$ Price Range: $2.85 - $6.51

IPB017N10N5ATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,020 pcs
5020 pcs On Request 1 On Request On Request On Request On Request On Request

IPB017N10N5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Pins
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IPB017N10N5ATMA1 Description

Short technical summary and product information.

The IPB017N10N5ATMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS 5 power transistor family. It is designed for high-frequency switching and synchronous rectification applications.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 100V, a maximum continuous drain current of 273A at Tc=25°C, and a very low maximum on-resistance of 1.7 mOhm at 10V gate drive. The device features a typical gate charge of 168 nC and an input capacitance of 15600 pF.

 

The MOSFET is housed in a surface-mount PG-TO263-7 package (D2Pak with 6 leads plus tab) and is qualified according to JEDEC for industrial applications. It is 100% avalanche tested and supports a junction temperature range of -55°C to 175°C.

IPB017N10N5ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: Infineon Technologies IPB017N10N5ATMA1 N-Channel MOSFET
Subcategory: Single N-Channel

IPB017N10N5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPB017N10N5ATMA1 Estimated Pricing

Qty Low High
1+ $6.51 $6.51
10+ $4.29 $4.29
100+ $3.12 $3.12
500+ $2.85 $2.85
1,000+ $2.85 $2.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB017N10N5ATMA1 Features

  • N-channel MOSFET with 100V drain-source voltage.
  • Very low 1.7 mOhm maximum on-resistance.
  • Rated for 273A continuous drain current.
  • OptiMOS 5 technology for high efficiency.
  • RoHS compliant and halogen-free package.

IPB017N10N5ATMA1 Applications

  • High-frequency switching power supplies.
  • Synchronous rectification circuits.
  • Industrial power conversion systems.
  • DC-DC converter applications.

IPB017N10N5ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPB017N10N5ATMA1?

The maximum drain-source voltage (Vdss) is 100 V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current (ID) at Tc = 25°C is 273 A.

What is the on-resistance of this MOSFET?

The maximum drain-to-source on-resistance (Rds(on)) is 1.7 mOhm at Id = 100 A and Vgs = 10 V.

What package does the IPB017N10N5ATMA1 come in?

It comes in a surface-mount PG-TO263-7 package (D2Pak with 6 leads plus tab).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPB017N10N5ATMA1 RoHS compliant?

Yes, the device is RoHS compliant and has Pb-free plating.

Home
Account

Categories